Publicaciones

• Communication dans un congrès

A localization technique for LOS and NLOS scenario

P. Stefanut, D.P. Gaillot, A. Nasr, M. Lienard, Pierre Degauque

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.121-124. ⟨hal-00550033⟩

• Communication dans un congrès

A contribution to the characterization of the interference power in cognitive radio networks

B. Pijcke, Marie Zwingelstein, Marc G. Gazalet, M Gharbi, Patrick Corlay, François-Xavier Coudoux

3rd European Wireless Technology Conference, EuWiT 2010, 2010, Ville inconnue, France. pp.137-140. ⟨hal-00550030⟩

• Communication dans un congrès

Output power density higher than 1W/mm at 4GHz thanks to an original silicon LDEMOS transistor layout

D. Ducatteau, D. Fournier, G. Bekangba, P. Chevalier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.150-153. ⟨hal-00550007⟩

• Communication dans un congrès

Influence of temperature on high frequency performance of graphene nano ribbon field effect

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

68th Device Research Conference, DRC 2010, 2010, United States. pp.69-70, ⟨10.1109/DRC.2010.5551934⟩. ⟨hal-00549925⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Communication dans un congrès

Injection-locking of terahertz quantum cascade lasers up to 35GHz via RF amplitude modulation

P. Gellie, S. Barbieri, Jean-Francois Lampin, P. Filloux, C. Manquest, C. Sirtori, I. Sagnes, S.P. Khanna, E.H. Linfield, H.E. Beere, D.A. Ritchie

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612807⟩. ⟨hal-00549949⟩

• Article dans une revue

Microwave modulation of terahertz quantum cascade lasers : a transmission-line approach

Wilfried Maineult, Lu Ding, Pierre Gellie, Pascal Filloux, Carlo Sirtori, Stefano Barbieri, Tahsin Akalin, Jean-Francois Lampin, Isabelle Sagnes, Harvey E. Beere, David Ritchie

We report on microwave impedance measurements of metal-metal ridge-waveguide terahertz quantum cascade lasers. Experimental data, recorded at 4 K in the 100 MHz–55 GHz range, are well reproduced by distributed-parameter transmission-line simulations, showing that the modulation cutoff is limited by...

Applied Physics Letters, 2010, 96, pp.021108-1-3. ⟨10.1063/1.3284518⟩. ⟨hal-00548728⟩

• Article dans une revue

Terahertz spiral planar Goubau line rejectors for biological characterization

A. Treizebre, Maxence Hofman, Bertrand Bocquet

Terahertz spectroscopy brings precious complementary information in life science by probing directly low energy bindings inside matter. This property has been demonstrated on dehydrated substances, and interesting results are obtained on liquid solutions. The next step is the characterization of...

Progress In Electromagnetics Research M, 2010, 14, pp.163-176. ⟨10.2528/PIERM10072110⟩. ⟨hal-00549501⟩

• Brevet

Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif

Guilhem Larrieu, Emmanuel Dubois