Publicaciones

• ART

Experimental study on sound and damaged mortar: Variation of ultrasonic parameters with porosity

Zoubeir Lafhaj, Marc Goueygou

The relationship between porosity and ultrasonic parameters of mortar was studied. In order to enhance the sensitivity of the ultrasonic wave to microstructural changes, a high frequency range, 0.6–1.2 MHz, was chosen. The material investigated consists of four mortar mixtures with water/cement...

Construction and Building Materials, 2009, 23 (2), pp.953-958. ⟨10.1016/j.conbuildmat.2008.05.012⟩. ⟨hal-00354607⟩

• COMM

Vers une nouvelle génération de sonde de microscopie à force atomique à base de micro et nano-systèmes électromécaniques

Bernard Legrand, Emmanuelle Algre, Lionel Buchaillot, Marc Faucher, Benjamin Walter

4èmes Journées Nationales en Nanosciences et Nanotechnologies, J3N 2009, 2009, Toulouse, France. ⟨hal-00575271⟩

• ART

Electrochemical impedance spectroscopy of ZnO nanostructures

Hong Liu, G. Piret, B. Sieber, J. Laureyns, P. Roussel, Wei-Jiang Xu, Rabah Boukherroub, Sabine Szunerits

The paper reports on the use of electrochemical impedance spectroscopy to determine the doping character and carrier density of freshly prepared and annealed ZnO nanostructures. The ZnO nanostructures were obtained by chemical oxidation of metallic Zn in a 5% N,N-dimethylformamide (DMF) aqueous...

Electrochemistry Communications, 2009, 11, pp.945-949. ⟨10.1016/j.elecom.2009.02.019⟩. ⟨hal-00383697⟩

• ART

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩

• ART

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for...

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• ART

A reduction modeling method to assess the electromagnetic emission of multiconductor transmission lines

Guillaume Andrieu, X. Bunlon, J.P. Parmantier, Alain Reineix, L. Kone, B. Demoulin

Comptes Rendus. Physique, 2009, 10, pp.83-90. ⟨10.1016/j.crhy.2008.12.002⟩. ⟨hal-00473697⟩

• ART

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

L.H. Yang, G.S. Wang, C.L. Mao, Y.Y. Zhang, R.H. Liang, Caroline Soyer, Denis Remiens, X.L. Dong

Journal of Crystal Growth, 2009, 311, pp.4241-4246. ⟨10.1016/j.jcrysgro.2009.05.025⟩. ⟨hal-00473732⟩

• ART

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩

• COMM

New applications of magneto-acoustic phase conjugation

Vladimir Preobrazhensky, Yuri Pyl'Nov, Philippe Pernod, Nikolay Smagin, Alain Merlen

The results of theoretical and experimental studies of application of parametric wave phase conjugation (WPC) for ultrasonic velocimetry of flows are reported. 3D-simulation of propagation of phase conjugate waves (PCW) in nonlinear and moving media is developed. Break of time reversal invariance...

XIXe Congrès Français de Mécanique, 2009, Marseille, France. pp.1-5. ⟨hal-00574889⟩

• ART

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation....

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩