Publicaciones

• COMM

Analyse du comportement HF d'une sous-station d'alimentation ferroviaire par homothétie physique et géométrique

H. Ouaddi, S. Baranowski, G. Nottet, B. Demoulin, L. Kone

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.C1-2, 1-4. ⟨hal-00573505⟩

• COMM

Metamaterial technologies at terahertz frequencies

F. Zhang, Charles Croënne, G. Houzet, D.P. Gaillot, X. Melique, Eric Lheurette, D. Lippens

25th Progress in Electromagnetics Research Symposium, PIERS 2009, 2009, Beijing, China. ⟨hal-00574853⟩

• COMM

High 'on-off' conductance ratio in self-assembled monolayers of azobenzene derivatized oligothiophenes grafted on gold

K. Smaali, S. Lenfant, D. Deresmes, S. Godey, D. Vuillaume, S. Karpe, M. Oçafrain, P. Blanchard, J. Roncali

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00574930⟩

• COMM

Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

Hans Nilsson, P. Caroff, E. Lind, C. Thelander, L.E. Wernersson

67th Device Research Conference, 2009, State College, PA, United States. ⟨hal-00574849⟩

• COMM

Future directions in acoustic RF MEMS devices

Bertrand Dubus

39th European Solid-State Device Research Conference, ESSDERC 2009, joint with 35th European Solid-State Circuits Conference, ESSCIRC 2009, 2009, Athens, Greece. ⟨hal-00575691⟩

• COMM

Theoretical and experimental study of the antireflection optical properties of TiO2 thin films elaborated by sol-gel method

N.H. Arabi, H. El Hamzaoui, A. Iratni, B. Capoen, Mathieu Halbwax, Jean-Pierre Vilcot, M. Bouazaoui

Conference on Innovations in Thin Film Processing and Characterisation, ITFPC09, 2009, Nancy, France. ⟨hal-00575324⟩

• COMM

Nanophotovoltaïsme

D. Stievenard

Workshop « Applications des nanotechnologies pour la Défense : protection et autonomie du fantassin », 2009, Paris, France. ⟨hal-00575365⟩

• ART

Preparation and multi-characterization of plasma polymerized allylamine films

Abdennour Abbas, Céline Vivien, Bertrand Bocquet, Didier Guillochon, Philippe Supiot

Plasma polymerized allylamine (ppAA) films were deposited in a radio-frequency glow discharge plasma reactor using a continuous-wave mode and varying the discharge power from 15 to 125 W. The deposition rate reached 26 nm · min−1 and was constant within at least half an hour of process. The...

Plasma Processes and Polymers, 2009, 6, pp.593-604. ⟨10.1002/ppap.200900016⟩. ⟨hal-00471822⟩

• ART

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, Ali Soltani, M. Mattalah, M. Moreau, P. Thevenin, Jean-Claude de Jaeger

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an...

Diamond and Related Materials, 2009, 18, pp.1039 - 1042. ⟨10.1016/j.diamond.2009.02.018⟩. ⟨hal-00435395⟩

• COMM

InAlN-based HEMT for microwave applications

S.L. Delage, N. Sarazin, M.A. Di Forte-Poisson, J.C. Jacquet, C. Dua, E. Morvan, C. Giesen, M. Heuken, B. Schineller, J.F. Carlin, M. Gonschorek, N. Grandjean, M. Py, A. Georgakilas, E. Iliopoulos, G. Konstantinidis, K. Cico, K. Fröhlich, Jean-Claude de Jaeger, Christophe Gaquière, E. Kohn, M. Alomari, F. Medjoub, J. Kuzmik, D. Pogany, G. Pozzovivo

8th Topical Workshop on Heterostructure Microelectronics, TWHN 2009, 2009, Nagano, Japan. ⟨hal-00575414⟩