Publicaciones

Affichage de 10981 à 10990 sur 16055


  • COMM

[Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique

Christophe Delerue, Mamadou Diarra, Yann-Michel Niquet, Guy Allan

22èmes Journées Surfaces-Interfaces, JSI 2008, Jan 2008, Grenoble, France. ⟨hal-00811725⟩

  • COMM

The role played by Mechanical Science during the Architect and Engineers design in the Renaissance

Raffaele Pisano

Research Lectures Series Prof. Dr. Eberhard Knobloch, 23 January, Institut für Philosophie, Wissenschaftstheorie, Wissenschafts–und Technikgeschichte, Technische Universität,, Jan 2008, Berlin - Humboldt Universität, Germany. ⟨hal-04518901⟩

  • COMM

Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology

Cédric Durand, Fabrice Casset, Bernard Legrand, Marc Faucher, Philippe Renaux, Denis Mercier, Denis Renaud, Didier Dutartre, Eric Ollier, Pascal Ancey, Lionel Buchaillot

The paper reports on in-plane nanometer scale resonators fabricated on 8 inch industrial tools, with a process based on the advanced CMOS Front End Silicon On Nothing Technology. The aim is to propose totally integrated time reference functions realized by small size NEMS resonators. The...

21st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2008, Jan 2008, Tucson - AZ, United States. pp.1016-1019, ⟨10.1109/MEMSYS.2008.4443831⟩. ⟨cea-00320830⟩

  • ART

Inner-shell charging of multiwalled carbon nanotubes

Mariusz Zdrojek, Thomas Heim, David Brunel, Alexandre Mayer, Thierry Melin

The electrostatic properties of individual multiwalled carbon nanotubes (MWCNTs) have been investigated from charge injection and electrostatic force microscopy experiments. The MWCNT linear charge densities analyzed as a function of the nanotube diameters are found to differ from classical...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.033404-1-4. ⟨10.1103/PhysRevB.77.033404⟩. ⟨hal-00357364⟩

  • PATENT

Integrated single-crystal MEMS device

M. Sworowski, D. Chevrie, P. Philippe

Patent n° : WO2008001253 (A2). 2008. ⟨hal-00372073⟩

  • ART

Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Nicolas Tiercelin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, V. Mortet, K. Haenen, A. Soltani

Applied Physics Letters, 2008, 93, pp.162902-1-3. ⟨10.1063/1.3001601⟩. ⟨hal-00356659⟩

  • ART

MOSFETs RF noise optimization via channel engineering

T.C. Lim, R. Valentin, Gilles Dambrine, Francois Danneville

IEEE Electron Device Letters, 2008, 29, pp.118-121. ⟨10.1109/LED.2007.911293⟩. ⟨hal-00356661⟩