Publicaciones

• COMM

Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects

Kathia Harrouche, Lyes Ben-Hammou, François Grandpierron, Ajay Shanbhag, Etienne Okada, F Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436421⟩

• COMM

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Lyes Ben Hammou, Kathia Harrouche, Etienne Okada, Fabrice Semond, Farid Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04397317⟩

• COMM

Process optimization of Fully Vertical GaN-on-Silicon PIN diodes

Idriss Abid, Youssef Hamdaoui, Sondre Michler, Katir Ziouche, F Medjdoub

Lateral GaN-on-silicon power transistors are now qualified up to 650 V voltage operation [1]. On the other hand, the development of cost-effective GaN-based vertical devices grown on large diameter silicon substrate combines the advantages of potentially higher voltage operation with avalanche...

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436413⟩

• COMM

Theoretical design for broadband parametric amplification in thin film lithium niobate

Pragati Aashna, Hong-Lin Lin, El Hadj Dogheche, Giacomo Benvenuti, Thanh N.K. Bui, Aaron Danner

2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360752⟩. ⟨hal-04419284⟩

• COMM

Dislocation density reduction for vertical GaN devices on 200 mm Si

Ziyao Gao, Youssef Hamdaoui, Idriss Abid, F Medjdoub, Elke Meissner, Sven Besendörfer, Michael Heuken

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436407⟩

• COUV

15. GaN-Based Lateral and Vertical Devices

Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, Jaeyi Chun, Riad Kabouche, Carlo de Santi, Enrico Zanoni, Gaudenzio Meneghesso

In the last decade, GaN has emerged as an excellent material for application in power electronics. The wide energy gap of gallium nitride (3.4 eV) enables high-temperature operation, while the large breakdown field (3.3 MV/cm, 11 times higher than silicon) allows to reach kV-range operation while...

Massimo Rudan; Rossella Brunetti; Susanna Reggiani. Springer Handbook of Semiconductor Devices, Springer International Publishing, pp.525-578, 2023, Springer Handbooks, ⟨10.1007/978-3-030-79827-7_15⟩. ⟨hal-03875409⟩

• ART

On-chip Amorphous THz Topological Photonic Interconnects

Rimi Banerjee, Abhishek Kumar, Thomas Caiwei Tan, Manoj Gupta, Ridong Jia, Pascal Szriftgiser, Guillaume Ducournau, Yidong Chong, Ranjan Singh

Valley Hall photonic crystals (VPCs) offer the potential for creating topological waveguides capable of guiding light through sharp bends on a chip, enabling seamless integration with functional components in compact spaces, making them a promising technology for terahertz topological photonic...

Science Advances , 2023, 11 (25), ⟨10.1126/sciadv.adu2526⟩. ⟨hal-04359750⟩

• COMM

Elaboration of nanoneedle arrays via nanosphere lithography and single step continuous ICP etching. Application for detections of neurodegenerative diseases' biomarkers by mass spectrometry

Paul Moustiez, Clara Whyte Ferreira, Sophie Halliez, Claudia Bich, Morvane Colin, Yannick Coffinier, Christine Enjalbal

SCOPE 2023, Nov 2023, Louvain la neuve, Belgium. ⟨hal-04814892⟩

• SOFTWARE

gtk-fortran

Vincent Magnin, James Tappin, Jens Hunger, Jerry Delisle

The gtk-fortran project provides bindings to the Fortran language for the GTK libraries (GTK, Cairo, GdkPixbuf, GLib...) and is licensed under GNU GPLv3 (with GCC Runtime Library Exception 3.1, see Licenses for more details). Like GTK and Fortran, it is cross-platform (Linux, macOS, BSD, Windows)....

2023, ⟨swh:1:dir:b06a51ed7ceb25d3658bdf2a3e5788e8af181df6;origin=https://hal.archives-ouvertes.fr/hal-04441102;visit=swh:1:snp:8f8295cf4fef346d2a56b5908fb2ac5c9c9a65b8;anchor=swh:1:rel:bea9e5ede188594d20cf4820b715767389f7bc5e;path=/⟩. ⟨hal-04441102⟩

• COMM

Phonon transport in asymmetric nanostructures in the ballistic regime

Boris Brisuda, Jon Canosa Diaz, Jean-François Robillard, Laurent Saminadayar, Olivier Bourgeois, Carlos Polanco Garcia, Natalio Mingo, Victor Doebele, Thierry Crozes

GDR NAME plenary days, Nov 2023, Rennes, France. ⟨hal-04705891⟩