Publicaciones

Affichage de 11151 à 11160 sur 16055


  • ISSUE

Special Issue. Qual è il ruolo culturale ed interdisciplinare delle scienze fisiche e matematiche ? Ipotesi e prospettive (Introduction to What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives)

Raffaele Pisano

Rivista di Epistemologia Didattica, III (5-6), 2008, What is the cultural and interdisciplinary role of the physical and mathematical sciences? Hypotheses and perspectives). ⟨hal-04514456⟩

  • ART

High-frequency noise performance of 60-nm gate-length FinFETs

J.P. Raskin, G. Pailloncy, D. Lederer, Francois Danneville, Gilles Dambrine, S. Decoutere, A. Mercha, B. Parvais

IEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩. ⟨hal-00356670⟩

  • ART

UWB in millimeter wave band with pulsed ILO

N. Deparis, Christophe Loyez, N. Rolland, P.A. Rolland

IEEE Transactions on Circuits and Systems I: Regular Papers, 2008, 55, pp.339-343. ⟨10.1109/TCSII.2008.918977⟩. ⟨hal-00356911⟩

  • ART

Sonic band gaps in one-dimensional phononic crystals with a symmetric stub

Anne-Christine Hladky, Jerome O. Vasseur, Bahram Djafari-Rouhani, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.104304-1-7. ⟨10.1103/PhysRevB.77.104304⟩. ⟨hal-00356646⟩

  • ART

Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation

A.S. Roy, C.C. Enz, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩. ⟨hal-00356669⟩

  • ART

Ballistic nanodevices for high frequency applications

C. Gardes, Yannick Roelens, S. Bollaert, J.S. Galloo, X. Wallart, A. Curutchet, Christophe Gaquière, J. Mateos, T. Gonzalez, B.G. Vasallo, L. Bednarz, I. Huynen

International Journal of Nanotechnology, 2008, 5, 796-808, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018698⟩. ⟨hal-00356665⟩

  • ART

Low-loss left-handed metamaterials at millimeter waves

F. Zhang, D.P. Gaillot, Charles Croënne, Eric Lheurette, X. Melique, D. Lippens

Applied Physics Letters, 2008, 93, pp.083104-1-3. ⟨10.1063/1.2975187⟩. ⟨hal-00356926⟩

  • COMM

InAlN/GaN MOSHEMT with thermally grown oxide

M. Alomari, F Medjdoub, J.F. Carlin, N. Grandjean, Christophe Gaquière, M.A. Poisson, S. Delage, E. Kohn

Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362034⟩

  • COMM

Towards high performance E-mode InAlN/GaN HEMTs

F Medjdoub, M. Alomari, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

32nd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2008, 2008, Belgium. pp.97-98. ⟨hal-00361120⟩