Publicaciones

• Communication dans un congrès

Thermal behaviour of gate-less AlGaN/GaN heterostructures

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jacky Laureyns, Jean-Claude de Jaeger

For power applications, the dissipated power in GaN based devices becomes very significant and consequently can generate a very important self-heating effect in the component. The self-heating in the device increases considerably the lattice or the operating temperature and the transport properties...

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. pp.104-107, ⟨10.1109/EMICC.2007.4412658⟩. ⟨hal-00284419⟩

• Article dans une revue

Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mössbauer spectrometry

A. Grenier, R. Lardé, E. Cadel, J.M. Le Breton, J. Juraszek, F. Vurpillot, Nicolas Tiercelin, Philippe Pernod, J. Teillet

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2215-2216. ⟨10.1016/j.jmmm.2006.10.1102⟩. ⟨hal-00285631⟩

• Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either...

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩

• Communication dans un congrès

Plasma wave transistors for THz detection and emission

S. Bollaert

European Microwave Week, Workshop ‘From THz devices to systems : Design, Modeling, Processes and Characterization', 2007, Munich, Germany. ⟨hal-00286246⟩

• Communication dans un congrès

High frequency figures of merit of conventional and Schottky barrier MOSFETs

Francois Danneville, R. Valentin, Emmanuel Dubois, Gilles Dambrine

4th International Symposium on System Construction of Global-Network-Oriented Information Electronics, 2007, Sendai, Japan. pp.412-417. ⟨hal-00286235⟩

• Article dans une revue

Comprehension of the S(V)LS mechanism growth of silicon-based nanowires

D. Hourlier, P. Perrot

Comptes Rendus. Chimie, 2007, 10, pp.658-665. ⟨hal-00285649⟩

• Article dans une revue

Vibrational properties of hexagonal boron nitride : inelastic x-ray scattering and ab-initio calculations

J. Serrano, A. Bosak, R. Arenal, M. Krisch, K. Watanabe, T. Taniguchi, H. Kanda, A. Rubio, L. Wirtz

Physical Review Letters, 2007, 98, pp.095503/1-4. ⟨10.1103/PhysRevLett.98.095503⟩. ⟨hal-00283183⟩

• Autre publication scientifique

Intégration de matériaux piézoélectriques et électrostrictifs dans les dispositifs radio-fréquence à ondes acoustiques

A. Volatier

2007. ⟨hal-00285685⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited...

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩

• Communication dans un congrès

Développement d'une technique de calibrage pour la mesure bistatique en espace libre sans filtrage temporel

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Maroc. pp.147-150. ⟨hal-00284474⟩