Publicaciones

• Article dans une revue

Single wire transmission lines at terahertz frequencies

Tahsin Akalin, A. Treizebre, Bertrand Bocquet

In this paper, we report results on an original way to excite surface waves on a single-wire transmission line. Although these waves were proposed many decades ago by Goubau, the novelty of our structures is to achieve a broadband planar excitement. This configuration is very well suited for the...

IEEE Transactions on Microwave Theory and Techniques, 2006, 54 (6), pp.2762-2767. ⟨10.1109/TMTT.2006.874890⟩. ⟨hal-00152958⟩

• Communication dans un congrès

Archimedes, Galileo and Torricelli. Epistemological analysis

Raffaele Pisano

XXVI SISFA International Congress of the history of physics and Astronomy, 15-17 June, SISFA & Department of Engineering (Raffaele Pisano and Danilo Capecchi Chairpersons and Organisers), University of Roma La Sapienza, Jun 2006, Roma, Italy. ⟨hal-04519310⟩

• Communication dans un congrès

Review of Sadi Carnot theory according to non classical logic

Raffaele Pisano

XXVI SISFA National Congress of the history of physics and Astronomy, 15-17 June, SISFA & Department of Enginering (Raffaele Pisano and Danilo Capecchi Chairpersons and Organisers), University of Roma La Sapienza, Jun 2006, Roma, Italy. ⟨hal-04519309⟩

• Communication dans un congrès

Propriétés dynamiques de transistors à base de nanotubes de carbone

Jean-Marc Bethoux, Henri Happy, Alexandre Siligaris, Gilles Dambrine, Jean-Sébastien Borghetti, Vincent Derycke, Jean-Philippe Bourgoin

Journées Thématiques du Club EEA Nanoélectronique, Jun 2006, Lille, France. ⟨hal-00241321⟩

• Communication dans un congrès

Review of Sadi Carnot's theory according to non classical logic

Raffaele Pisano

XXVI SISFA International Congress of the history of physics and Astronomy, 15-17 June, SISFA & Department of Engineering (Raffaele Pisano and Danilo Capecchi Chairpersons and Organisers), University of Roma La Sapienza, Jun 2006, Roma, Italy. ⟨hal-04519313⟩

• Communication dans un congrès

Filter Bank Design for Speaker Diarization Based on Genetic Algorithms

C. Charbuillet, B. Gas, M. Chetouani, J.L. Zarader

2006 IEEE International Conference on Acoustics Speed and Signal Processing, Jun 2006, Toulouse, France. pp.I-673-I-676, ⟨10.1109/ICASSP.2006.1660110⟩. ⟨hal-02423545⟩

• Article dans une revue

Modeling of a quantum cascade laser operating at 1 THz

Olivier Bonno, Jean-Luc Thobel, François Dessenne

A design of a quantum cascade laser operating at 1 THz is proposed and studied by means of ensemble Monte Carlo simulation. Starting from a resonant-phonon structure working at 2.1 THz [B. Williams, S. Kumar, Q. Hu, J. Reno, Electron. Lett. 40 (7) (2004) 431], a refinement is proposed in order to...

Physica E: Low-dimensional Systems and Nanostructures, 2006, 33 (1), pp.13-16. ⟨10.1016/j.physe.2005.07.020⟩. ⟨hal-00128184⟩

• Communication dans un congrès

VRAM : A quasi non volatile low power memory cell

G. Bossu, R. Ranica, A. Villaret, C. Charbuillet, D. Chanemougame, S. Monfray, S. Borel, F. Leverd, P. Masson, P. Mazoyer

IEEE Si Nanoelectronics Workshop A Satellite Conference of the 2006 VLSI Technology Symposium, Jun 2006, Honolulu, HI, United States. ⟨hal-00525084⟩

• Communication dans un congrès

Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Laurent Bary, Jacques Rayssac, E Morvan, B Grimbert, Jean-Claude de Jaeger, Jacques Graffeuil

Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA. The frequency synthesis is not yet widely explored for these technologies. In this paper the...

IMS 2006, Jun 2006, San Francisco, United States. 4p, ⟨10.1109/MWSYM.2006.249760⟩. ⟨hal-01343917⟩

• Article dans une revue

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennegues, F. Mathal, Z. Bougrioua

The microstructure of (11‐20) GaN films grown on (1‐102) sapphire substrates is studied by transmission electron microscopy. The predominant defects emerging at the surface of a 1‐2 μm thick layers are basal stacking faults of I1 type (1/6<20‐23> displacement vector). These defects are either...

Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (6), pp.1658-1661. ⟨10.1002/pssc.200565292⟩. ⟨hal-02906705⟩