Publicaciones

• Communication dans un congrès

Raman spectroscopy and AFM characterization on individual Si-based nanowires

M. Marczak, M. Zdrojek, W. Gebicki, C. Jastrzebski, Thierry Melin, D. Hourlier

European Material Research Society Spring Meeting, E-MRS - IUMRS - ICEM 06, Symposium E : Science and Technology of Nanotubes and Nanowires, 2006, Nice, France. ⟨hal-00243973⟩

• Communication dans un congrès

Catalytic growth of silicon nanowires supported on high surface oxide substrates

D. Hourlier, P. Lefebvre, A. Addad, R.N. Vannier, P. Perrot

Matériaux 2006, 2006, Dijon, France. ⟨hal-00243979⟩

• Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• Communication dans un congrès

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Poisson, B. Grimbert, Christophe Gaquière

1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, United Kingdom. pp.54-57, ⟨10.1109/EMICC.2006.282748⟩. ⟨hal-00247418⟩

• Communication dans un congrès

On the use of a performance indicator for optimal pilot positioning in multicarrier systems

David Buèche, Patrick Corlay, Marc G. Gazalet, François-Xavier Coudoux, Marc Slachciak

We have recently proposed a simple performance indicator for discrete multitone systems, which accounts for the channel estimation error, the emitted power and the noise level. It shows a much better correlation with the bit error rate (BER) than the more classical mean square error (MSE) while...

13th International Conference on Electronics, Circuits and Systems, ICECS 2006, Dec 2006, Nice, France. pp.978-981, ⟨10.1109/ICECS.2006.379954⟩. ⟨hal-00247417⟩

• Communication dans un congrès

Reduced complexity power minimization algorithm for DMT transmission – Application to layered multimedia services over DSL

C. Goudemand, Marc G. Gazalet, François-Xavier Coudoux, Patrick Corlay, M Gharbi

13th International Conference on Electronics, Circuits and Systems, ICECS 2006, 2006, France. pp.728-731, ⟨10.1109/ICECS.2006.379892⟩. ⟨hal-00247415⟩

• Communication dans un congrès

Plasma wave HEMTs for THz applications

A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, N. Dyakonova, W. Knap, J. Lusakowski, F. Teppe, A. El Fatimy, M. Dyakonov

Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩. ⟨hal-00241319⟩

• Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is...

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

• Communication dans un congrès

Carbon nanotubes self-assembly for electronic applications

Vincent Derycke, M. F. Goffman, Jean-Sébastien Borghetti, Erik Dujardin, Arianna Filoramo, Pascale Chenevier, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Stéphane Lenfant, Dominique Vuillaume, Jean-Philippe Bourgoin

Proceedings of the 2006 International Conference on Micro and Nano Engineering, MNE06, 2006, Barcelona, Spain. ⟨hal-00241346⟩

• Article dans une revue

Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications

M. Si Moussa, C. Pavageau, D. Lederer, L. Picheta, Francois Danneville, N. Fel, J. Russat, J.P. Raskin, D. Vanhoenacker-Janvier

Solid-State Electronics, 2006, 50, pp.1822-1827. ⟨hal-00147509⟩