Publicaciones

• Communication dans un congrès

Impact of phase and timing jitter on IFDMA systems

E. Simon, Rodolphe Le Gouable, Maryline Hélard, M. Lienard

IEEE 17th International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC 2006, Sep 2006, Helsinki, Finland. 5 p. ⟨hal-00400242⟩

• Article dans une revue

Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength

Nicolas Chimot, Juliette Mangeney, Patrick Mounaix, Marc Tondusson, Karine Blary, Jean-Francois Lampin

The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and...

Applied Physics Letters, 2006, 89, pp.83519-1-3. ⟨10.1063/1.2338538⟩. ⟨hal-00162817⟩

• Communication dans un congrès

Continuous wave THz generation based on a dual-frequency laser and a LTG - InGaAs photomixer

R. Czarny, M. Alouini, X. Marcadet, S. Bansropun, J.L. Doualan, R. Moncorge, Jean-Francois Lampin, M. Krakowski, D. Dolfi

International Topical Meeting on Microwaves Photonics, 2006, France. pp.290-292, ⟨10.1109/MWP.2006.346534⟩. ⟨hal-00247427⟩

• Article dans une revue

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩. ⟨hal-00329604⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of...

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Communication dans un congrès

A new digital receiver architecture for direction finding systems

V.Y. Vu, A. Benlarbi-Delaï

1st International Conference on Communications and Electronics, HUT-ICCE 2006, 2006, Vietnam. pp.430-433, ⟨10.1109/CCE.2006.350863⟩. ⟨hal-00241354⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Communication dans un congrès

Metamaterial-based devices at millimetre and sub-millimetre wavelengths

D. Lippens

2006, 4 pp. ⟨hal-00152963⟩

• Communication dans un congrès

Dynamic response of carbon nanotube field-effect transistors in the GHz range

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

Proceedings of the Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00241345⟩