Publicaciones
Affichage de 12881 à 12890 sur 16170
Packaging methodology for RF devices using a BCB membrane transfert technique
S. Seok, N. Rolland, P.A. Rolland
Journal of Micromechanics and Microengineering, 2006, 16, pp.2384-2388. ⟨hal-00126798⟩
Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire
Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart
MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩
Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes
L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume
Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩
The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics
K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume
International Conference on Organic Electronics, 2006, Eindhoven, Netherlands. ⟨hal-00127134⟩
Electroformation of giant liposomes in microfluidic channels
K. Kuribayashi, G. Tresset, P. Coquet, H. Fujita, S. Takeuchi
Measurement Science and Technology, 2006, 17, pp.3121-3126. ⟨10.1088/0957-0233/17/12/S01⟩. ⟨hal-00244016⟩
Impact of phase and timing jitter on IFDMA systems
E. Simon, Rodolphe Le Gouable, Maryline Hélard, M. Lienard
IEEE 17th International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC 2006, Sep 2006, Helsinki, Finland. 5 p. ⟨hal-00400242⟩
Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices
Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel
IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩
An optimal high contrast e-beam lithography process for the patterning of dense fin networks
F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller
Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩
Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs
J. Penaud, F. Fruleux, Emmanuel Dubois
Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩