Publicaciones

• Article dans une revue

Three dimensional calculation of propagation losses in photonic crystal waveguides

S. Fasquel, X. Melique, O. Vanbesien, D. Lippens

Optics Communications, 2005, 246, pp.91-96. ⟨hal-00125351⟩

• Communication dans un congrès

Trends and challenge in micro and nanoelectronics device research in Europe

A. Cappy, Nicolas Wichmann, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzalez, W. Knap

Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan. ⟨hal-00125339⟩

• Communication dans un congrès

Propriétés hyperfréquences et de bruit des filières conventionnelles de transistors MOS à grille sub-100 nm

G. Pailloncy, Gilles Dambrine, Francois Danneville

Actes des 8èmes Journées Nationales du Réseau Doctoral de Microélectronique, 2005, Paris, France. ⟨hal-00126726⟩

• Communication dans un congrès

Performance d'une liaison descendante basée sur le MC-CDMA dans le canal à 60 GHz : comparaison avec l'OFDM-TDMA et le DS-CDMA

H. El Ghazi, C. Garnier, Laurent Clavier, W. Sawaya, Y. Delignon

Actes des 4èmes Journées Franco-Maghrébines des Microondes et leurs Applications, 2005, Rabat, Maroc. ⟨hal-00126739⟩

• Communication dans un congrès

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hours on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan, M.A. Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, Jean-Claude de Jaeger

2005, 4 pp. ⟨hal-00126762⟩

• Article dans une revue

Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

J. Lusakowski, N. Dyakonova, L. Varani, J. Mateos, T. Parenty, A. Cappy, V. Popov, M.S. Shur

Journal of Applied Physics, 2005, 97 (6), pp.064307. ⟨10.1063/1.1861140⟩. ⟨hal-00330467⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-...

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩

• Article dans une revue

Photonic devices based on preferential etching

Bob Bellini, Jean-François Larchanché, Jean-Pierre Vilcot, Didier Decoster, Romeo Beccherelli, Antonio D’alessandro

We introduce a design concept of optical waveguides characterized by a practical and reproducible process based on preferential etching of crystalline silicon substrates. Low-loss waveguides, spot-size converters, and power dividers have been obtained with polymers. We have also aligned liquid...

Applied optics, 2005, 44, pp.7181-7186. ⟨10.1364/AO.44.007181⟩. ⟨hal-00154910⟩

• Article dans une revue

Terahertz generation by plasma waves in nanometer gate high electron mobility transistors

J. Lusakowski, F. Teppe, N. Dyakonova, Y.M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov, M.S. Shur

Physica Status Solidi A (applications and materials science), 2005, 202, pp.656-659. ⟨hal-00154893⟩

• Article dans une revue

Design of microstrip to waveguide transition in the W band suitable antenna or integrated circuits connections

B.D. Nguyen, Claire Migliaccio, Christian Pichot, N. Rolland

This paper presents a millimeter waveguide-to-microstrip line transition based on E-mode coupling. It uses a standard W-band waveguide and a microstrip line made on alumina substrate. It has been designed for the center frequency of 94 GHz. A back-to-back transition has been done and measured...

Microwave and Optical Technology Letters, 2005, 47, pp.518-520. ⟨hal-00154905⟩