Publicaciones

• COMM

Structural and optical characterization of InSb-doped Si02 thin films

B. Capoen, V.L. Quang, S. Turrell, Jean-Pierre Vilcot, F. Beclin, Y. Jestin, M. Bouazaoui

5th Symposium on SiO2, Advanced Dielectrics and Related Devices, 2004, Chamonix, France. ⟨hal-00141206⟩

• ART

Effect of quantum confinement on the dielectric constant of PbSe

Zeger Hens, Daniel Vanmaekelbergh, Ernst Stefan Kooij, Herbert Wormeester, Guy Allan, Christophe Delerue

Monolayers of lead selenide nanocrystals of a few nanometers in height have been made by electrodeposition on a Au(111) substrate. These layers show a thickness-dependent dielectric function, which was determined using spectroscopic ellipsometry. The experimental results are compared with...

Physical Review Letters, 2004, 92, pp.026808/1-4. ⟨10.1103/PhysRevLett.92.026808⟩. ⟨hal-00141244⟩

• COMM

AC-only RF-ID tags for barcode replacement

S. Briole, C. Pacha, K. Goser, A. Kaiser, R. Thewes, W. Weber, R. Brederlow

2004, pp.438-537. ⟨hal-00140988⟩

• ART

PZT polarization voltage effects on off-centered PZT patch actuating silicon membrane

M. Guirardel, C. Bergaud, Eric Cattan, Denis Remiens, B. Belier, S. Petitgrand, A. Bosseboeuf

Sensors and Actuators A: Physical , 2004, 110, pp.385-389. ⟨hal-00141180⟩

• ART

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩

• COMM

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• COMM

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• ART

Electrical and morphological properties of PP and PET conductive polymer fibers

B. Kim, V. Koncar, E. Devaux, C. Dufour, P. Viallier

Synthetic Metals, 2004, 146, pp.167-174. ⟨hal-00140736⟩

• COMM

Recent french results in molecular-scale electronics

D. Vuillaume

French-Russian Conference on Nanosciences and Nanotechnology, 2004, Moscou, Russia. ⟨hal-00140756⟩

• COMM

Integration of molecules on a chip : from Si-H surface chemistry to nanometer-sized diodes

L. Baraton, J.P. Bourgoin, Vincent Derycke, Erik Dujardin, C. Chevrot, Serge Palacin, D. Vuillaume

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140741⟩