Publicaciones

• Communication dans un congrès

Theory of the luminescence of porous silicon

Christophe Delerue, Michel Lannoo, Guy Allan

E-MRS Spring Meeting, May 1993, Strasbourg, France. ⟨hal-03316745⟩

• Article dans une revue

Raman scattering from folded acoustic phonons and photoluminescence in multilayer GaAs-AlAs superlattices

D. Lockwood, R. Devine, A. Rodriguez, J. Mendialdua, B. Djafari Rouhani, Leonard Dobrzynski

Physical Review B, 1993, 47 (20), pp.13553-13560. ⟨10.1103/PhysRevB.47.13553⟩. ⟨hal-04070323⟩

• Communication dans un congrès

Transport simulation in submicron MOSFETS by coupling Monte Carlo and Drift Diffusion

Bricout Paul-Henri, Emmanuel Dubois, Renaud Fauquembergue

Proc. of Nasecode IX, Apr 1993, Copper Mountain, United States. ⟨hal-04249113⟩

• Article dans une revue

Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs

Emmanuel Dubois, G.G. Shahidi, M.R. Scheuermann

An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over...

IEEE Electron Device Letters, 1993, 14 (4), pp.164-166. ⟨10.1109/55.215163⟩. ⟨hal-04246691⟩

• Article dans une revue

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Dominique Vuillaume, Marchetaux J.-C., Lippens P.-E., Bravaix A., Boudou A.

The creation of defects by hot-carrier effect in submicrometer (0.85µm) LDD n-MOSFETs is analyzed by the floating-gate and the charge-pumping techniques. It is emphasized that the floating-gate technique is an attractive tool for characterizing the oxide traps located in the drain-gate overlap...

IEEE Transactions on Electron Devices, 1993, 40 (4), ⟨10.1109/16.202790⟩. ⟨hal-03022897⟩

• Article dans une revue

Theoretical aspects of solute segregation to high-angle grain boundaries

Jerome O. Vasseur, P.A. Deymier, Bahram Djafari-Rouhani, L. Dobrzynski

Interface Science, 1993, 1 (1), ⟨10.1007/BF00203265⟩. ⟨hal-03301126⟩

• Communication dans un congrès

Temperature measurements of LT-GaAs diodes

R. Westphalen, B. Boudart, Didier Theron, Xavier Wallart, Y. Druelle, Y. Crosnier

European Materials Research Society, 1993, Strasbourg, France. ⟨hal-01648117⟩

• Chapitre d'ouvrage

DISPERSION OF LONGITUDINAL ULTRASONIC WAVE VELOCITY THROUGH CARBON-EPOXY COMPOSITE MATERIALS.

Mohamed Ourak, Mohammadi Ouaftouh, Jean-Michel Rouvaen, Bertrand Nongaillard, C. Bruneel

Ultrasonics International 93, Elsevier, pp.435-438, 1993, ⟨10.1016/b978-0-7506-1877-9.50108-6⟩. ⟨hal-03811463⟩

• Article dans une revue

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Henri Happy, Gilles Dambrine, Jocelyn Alamkan, Francois Danneville, François Kaptche-Tagne, A. Cappy

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1993, 3 (1), pp.14-28. ⟨10.1002/mmce.4570030105⟩. ⟨hal-03317740⟩

• Communication dans un congrès

The theory of rare-earth impurities in semiconductors

Christophe Delerue, Michel Lannoo

MRS 1993 Spring Meeting, 1993, San Francisco, United States. ⟨hal-03316744⟩