Publicaciones

• Communication dans un congrès

Elastic metasurface made of elliptic shape pillars for acoustic wave focusing

Bahram Djafari-Rouhani, Laurent Carpentier, Yan Pennec

We numerically propose the design of a metasurface for focusing the flexural Lamb waves propagating on a plate. The metasurface consists of a line of pillars of elliptic shape with a gradient in their ellipticity. We first determine an elliptic pillar that allows the superposition of two resonances...

2022 IEEE International Ultrasonics Symposium, IUS 2022, Oct 2022, Venise, Italy. pp.1-3, ⟨10.1109/IUS54386.2022.9957873⟩. ⟨hal-03885901⟩

• Article dans une revue

Asymmetric Design for a High‐Performance Indoor Radiative Heating Fabric

Mohamed Boutghatin, Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj, Valérie Gaucher, Hayriye Gidik, Salim Assaf, Michèle Carette, V. Thomy

Improving radiative heating performance of textiles is becoming one of the most current research topics to reduce the energy consumption used to control the indoor areas temperature. In this work, the properties of a textile-based asymmetric design for radiative heating are studied both...

Advanced Materials Technologies, 2022, 7 (10), pp.2101738. ⟨10.1002/admt.202101738⟩. ⟨hal-03630726⟩

• Communication dans un congrès

Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm

Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub

International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩

• Communication dans un congrès

AlGaN channel high electron mobility transistors on bulk AlN substrate

Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub

International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩

• Communication dans un congrès

Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

Marie Lesecq, Éric Frayssinet, Marc Portail, Micka Bah, Nicolas Defrance, Thi Huong Ngo, Mahmoud Abou Daher, Ali Abboud, Yassine Fouzi, Marcin Zielinski, Daniel Alquier, Jean-Claude de Jaeger, Yvon Cordier

In spite of their outstanding performances for microwave power applications, transistors based on GaN-on-SiC [1] suffer from the lower availability and higher cost of the substrate compared to Silicon ones permitting also to get GaN devices interesting high frequency performances [2]. However,...

International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-04037282⟩

• Communication dans un congrès

Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

S Venkatachalam, Kathia Harrouche, François Grandpierron, Stefan Degroote, Marianne Germain, Joff Derluyn, F Medjdoub

International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829010⟩

• Communication dans un congrès

[Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus

Despite considerable progress in their process technology during the last years, vertical GaN power transistors are currently not finding market entry due to the small size and high cost of native GaN substrates. This issue can in principle be circumvented by using heteroepitaxial GaN on more...

International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩

• Article dans une revue

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, Nicolas Wichmann, T. González, J. Mateos

We report on the measurements of the two main figures of merit for microwave detection, namely, responsivity and noise equivalent power (NEP), in HEMTs based on two of the most broadly used material systems AlGaN/GaN and AlInAs/InGaAs. A comparison between their performances as RF detectors in a...

Journal of Applied Physics, 2022, 132 (13), pp.134501. ⟨10.1063/5.0111114⟩. ⟨hal-03814081⟩

• Pré-publication, Document de travail

Image Style Transferred to Graphical User Interfaces

Karim Hammoudi, Adnane Cabani, Halim Benhabiles, Mahmoud Melkemi

This paper presents an approach for permitting the restyling of an application by automatic analysis of a considered image. The approach relies on the analysis of color distribution from a query image and a color-to-component mapping in order to perform its style transfer to the GUI. No deep...

2022. ⟨hal-03798607⟩

• Communication dans un congrès

Scanning microwave microscopy for detecting mechanical vibrations of silicon nitride membranes

Hao Xu, Didier Theron, X Zhou

Highly stressed silicon nitride mechanical resonators, due to nanogram effective mass and high resonance frequency in megahertz, are attractive for various sensing applications [1]. Unlike optical readout schemes, electrical detections of tiny displacements from silicon nitride resonators are more...

GDR-mecaQ, Oct 2022, Bordeaux (France), France. ⟨hal-04416081⟩