Publications

• Autre publication scientifique

Conception et réalisation de photodétecteurs X-UV à base de semiconducteurs à large bande interdite destinés à des applications spatiales

Hassan Ali Barkad

2009. ⟨hal-00572814⟩

• Communication dans un congrès

Atténuation des ondes de Lamb et ondes évanescentes dans un réseau phononique à une dimension

M. Bavencoffe, B. Morvan, Anne-Christine Hladky, J.L. Izbicki

XIèmes Journées d'Acoustique Physique, Sous-Marine et Ultrasonore, JAPSUS 2009, 2009, Le Mans, France. ⟨hal-00574845⟩

• Chapitre d'ouvrage

Transistors à nanotubes de carbone pour des applications en haute fréquence

H. Happy, Gilles Dambrine

Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.321-324, 2009. ⟨hal-00575775⟩

• Article dans une revue

On the use of a chaotic cavity transducer in nonlinear elastic imaging

Olivier Bou Matar, Y.F. Li, K. van den Abeele

Applied Physics Letters, 2009, 95, pp.141913-1-3. ⟨10.1063/1.3245306⟩. ⟨hal-00469658⟩

• Article dans une revue

A millimeter-wave microstrip antenna array on ultra-flexible micromachined polydimethylsiloxane (PDMS) polymer

S. Hage-Ali, Nicolas Tiercelin, P. Coquet, R. Sauleau, H. Fujita, Vladimir Preobrazhensky, Philippe Pernod

The use of Polydimethylsiloxane (PDMS), an ultra flexible polymer, as a substrate for the realization of reconfigurable microwave devices in the 60-GHz band is presented. As bulk PDMS is demonstrated to be lossy at millimeter waves, membrane-supported devices are considered. A new reliable and…

IEEE Antennas and Wireless Propagation Letters, 2009, 8, pp.1306-1309. ⟨10.1109/LAWP.2009.2037590⟩. ⟨hal-00469645⟩

• Article dans une revue

Synthesis and luminescence properties of (N-Doped) ZnO nanostructures from a dimethylformamide aqueous solution

B. Sieber, Hong Liu, G. Piret, J. Laureyns, P. Roussel, B. Gelloz, Sabine Szunerits, Rabah Boukherroub

The paper reports on the optical properties of ZnO nanostructures elaborated on a zinc foil substrate by a simple chemical approach. The doping type and density of the ZnO nanostructures were evaluated using electrochemical impedance spectroscopy. XRD diffraction patterns and Raman spectroscopy…

Journal of Physical Chemistry C, 2009, 113, pp.13643-13650. ⟨10.1021/jp903504w⟩. ⟨hal-00412954⟩

• Communication dans un congrès

Laser ultrasonics and neural networks for the characterisation of thin plates

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, P. Poussot, Mohamed Ourak

International Symposium on Technological Innovation & Transport Systems, ITT'09, 2009, Paris, France. ⟨hal-00575755⟩

• Article dans une revue

Electrochemical impedance spectroscopy of ZnO nanostructures

Hong Liu, G. Piret, B. Sieber, J. Laureyns, P. Roussel, Wei-Jiang Xu, Rabah Boukherroub, Sabine Szunerits

The paper reports on the use of electrochemical impedance spectroscopy to determine the doping character and carrier density of freshly prepared and annealed ZnO nanostructures. The ZnO nanostructures were obtained by chemical oxidation of metallic Zn in a 5% N,N-dimethylformamide (DMF) aqueous…

Electrochemistry Communications, 2009, 11, pp.945-949. ⟨10.1016/j.elecom.2009.02.019⟩. ⟨hal-00383697⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• Article dans une revue

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩