Publicaciones

• Communication dans un congrès

Design of frequency compensated power detector in the G-band

Issa Alaji

European Microwave Conference, EuMC 2021, Session WS09-EuMC – Workshop Research in Power and S-parameters Measurements at mmWave and Terahertz Frequencies, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637500⟩

• Communication dans un congrès

Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz

Caroline Maye, Sylvie Lepilliet, Etienne Okada, E. Brezza, A. Gauthier, M. Margalef-Rovira, D. Gloria, Guillaume Ducournau, Christophe Gaquière

In this paper, we report high power performances at 185 GHz on single ended heterojunction bipolar transistors in the BiCMOS055 technology. Three device sizes were designed and characterized up to their saturation region. This was possible thanks to a power setup which offers an available input...

16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. ⟨10.23919/EuMIC50153.2022.9783811⟩. ⟨hal-03637263⟩

• Communication dans un congrès

Light matter interaction enhancement through spatial confinement in the THz range: towards spectral analysis of single objects

Theo Hannotte, Melanie Lavancier, Louis Thomas, Sergey Mitryukovskiy, Jean-Francois Lampin, Romain Peretti

We explored two ways to enhance light matter interaction in the THz range through spatial confinement of the electric field. Firstly, a broadband metallic waveguide with low losses and low dispersion used in a TDS setup to measure samples with volume as low as 200pL. In this proceeding, we explore...

SPIE Photonics Europe 2022, Terahertz Photonics II, Apr 2022, Strasbourg, France. 1213406, 6 p., ⟨10.1117/12.2621253⟩. ⟨hal-03741609⟩

• Communication dans un congrès

A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology

Victor Fiorese, Joao Carlos, Azevedo Goncalves, Simon Bouvot, Emmanuel Dubois, Christophe Gaquière, Guillaume Ducournau, François Danneville, Sylvie Lépilliet, Daniel Gloria

A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup...

16th European Microwave Integrated Circuits Conference, EuMIC 2021, Apr 2022, London, United Kingdom. pp.125-128, ⟨10.23919/EuMIC50153.2022.9783645⟩. ⟨hal-03637553⟩

• Communication dans un congrès

Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability

F Medjdoub

16th European Microwave Integrated Circuits Conference, EuMIC 2021, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03637246⟩

• Communication dans un congrès

THz devices and systems: from technology to applications

Guillaume Ducournau, Jean-Francois Lampin, Emilien Peytavit, S Barbieri

24th European Microwave Week, EuMW 2021, Session WS02 EuMIC/EuMC - Terahertz Device, Circuit and System Fundamentals and Applications, EuMIC/EuMC/EuMW, Apr 2022, London, United Kingdom. ⟨hal-03641848⟩

• Article dans une revue

2.45 GHz natural polymer‐based flexible bandpass filter exploiting laser structuring

Abdelghafour Sid, Pierre-Yves Cresson, Nicolas Joly, Flavie Braud, Benoit Genestie, Tuami Lasri

This article presents the realization of a bandpass filter on a flexible biopolymer substrate with a suitable fabrication process. We used copper adhesive tape and laser structuring to fabricate the filter based on a quasi-lumped microstrip structure. The filter characteristics are a central...

Microwave and Optical Technology Letters, 2022, 64 (4), pp.727-732. ⟨10.1002/mop.33194⟩. ⟨hal-03587344⟩

• Article dans une revue

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Giuseppe Di Gioia, Mohammed Samnouni, Vinay Kumar Chinni, Priyanka Mondal, Jeanne Treuttel, Malek Zegaoui, Guillaume Ducournau, Mohammed Zaknoune, Yannick Roelens

Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the...

Superlattices and Microstructures, 2022, 164, pp.107116. ⟨10.1016/j.spmi.2021.107116⟩. ⟨hal-03542163⟩

• Autre publication scientifique

Erratum: On-chip thermometry for microwave optomechanics implemented in a nuclear demagnetization cryostat [Phys. Rev. Applied 12 , 044066 (2019)]

Xin Zhou, D. Cattiaux, R.R. Gazizulin, A. Luck, O. Maillet, T. Crozes, J-F. Motte, Olivier Bourgeois, A. Fefferman, E. Collin

2022, pp.049901. ⟨10.1103/PhysRevApplied.17.049901⟩. ⟨hal-03700570⟩

• Article dans une revue

Thermal conductivity of amorphous SiO2 by first-principles molecular dynamics

Evelyne Martin, Guido Ori, Thuy-Quynh Duong, Carlo Massobrio, Mauro Boero

The approach-to-equilibrium molecular dynamics (AEMD) methodology implemented within a first-principles molecular dynamics (FPMD) scheme is applied to amorphous SiO. In this disordered material, measurements of the thermal conductivity indicate no reduction down to 10 nm. In view of these premises...

Journal of Non-Crystalline Solids, 2022, 581, pp.121434. ⟨10.1016/j.jnoncrysol.2022.121434⟩. ⟨hal-03560461⟩