Publicaciones

• Article dans une revue

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (Sc_xAl_1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Fahima Arab, Fares Kanouni, Rafik Serhane, Yan Pennec, Zafer Özer, Khaled Bouamama

Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay...

• Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way...

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

• Article dans une revue

Review on Unmanned Aerial Vehicle Assisted Sensor Node Localization in Wireless Networks: Soft Computing Approaches

Visalakshi Annepu, Deepika Rani Sona, Chinthaginjala Ravikumar, Kalapraveen Bagadi, Mohammad Alibakhshikenari, Ayman Althuwayb, Bader Alali, Bal Virdee, Giovanni Pau, Iyad Dayoub, Chan Hwang See, Francisco Falcone

Node positioning or localization is a critical requisite for numerous position-based applications of wireless sensor network (WSN). Localization using the unmanned aerial vehicle (UAV) is preferred over localization using fixed terrestrial anchor node (FTAN) because of low implementation complexity...

IEEE Access, 2022, 10, pp.132875-132894. ⟨10.1109/ACCESS.2022.3230661⟩. ⟨hal-03940270⟩

• Article dans une revue

Modeling of access resistances and channel temperature estimation for GaN HEMT

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquière

Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the...

Journal of Thermal Analysis and Calorimetry, 2022, 147, pp.10991-10998. ⟨10.1007/s10973-022-11371-y⟩. ⟨hal-03670320⟩

• Article dans une revue

La photonique dans la métropole lilloise

Laurent Bigot, Guillaume Ducournau, A. Amo

Ces dernières années, la métropole lilloise s’est imposée comme un pôle de recherche académique incontournable dans le domaine de la photonique. C’est notamment le cas des travaux en optique fibrée, en optique non-linéaire, en topologie ou encore en photonique-Terahertz, qui ont une forte...

Photoniques, 2022, 114, pp.17-20. ⟨10.1051/photon/202211417⟩. ⟨hal-03706864⟩

• Article dans une revue

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major...

Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

• Article dans une revue

Topological cavities in phononic plates for robust energy harvesting

Zhihui Wen, Yabin Jin, Penglin Gao, Xiaoying Zhuang, Timon Rabczuk, Bahram Djafari-Rouhani

Mechanical Systems and Signal Processing, 2022, 162, pp.108047. ⟨10.1016/j.ymssp.2021.108047⟩. ⟨hal-03542927⟩

• Article dans une revue

Terphenylthiazole-based self-assembled monolayers on cobalt with high conductance photo-switching ratio for spintronics

Vladimir Prudkovskiy, Imane Arbouch, Anne Léaustic, Pei Yu, Colin van Dyck, David Guérin, Stéphane Lenfant, Talal Mallah, Jérôme Cornil, Dominique Vuillaume

Two new photo-switchable terphenylthiazole molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a larger conductance of the light-induced closed...

Nanoscale, 2022, 14, pp.5725 - 5742. ⟨10.1039/d2nr00591c⟩. ⟨hal-03625458⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional...

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩