Publicaciones

• Article dans une revue

Modeling of access resistances and channel temperature estimation for GaN HEMT

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquière

Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the...

Journal of Thermal Analysis and Calorimetry, 2022, 147, pp.10991-10998. ⟨10.1007/s10973-022-11371-y⟩. ⟨hal-03670320⟩

• Article dans une revue

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (Sc_xAl_1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Fahima Arab, Fares Kanouni, Rafik Serhane, Yan Pennec, Zafer Özer, Khaled Bouamama

Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay...

• Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩

• Article dans une revue

Embroidered Spoof Surface Plasmon Polariton Transmission Line for Wireless Body Sensor Network

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

A wearable Spoof Surface Plasmon Polariton Transmission Line (SSPP TL) operating at 2.45 GHz designed for embroidery production and on-body communication is proposed. The SSPP TL supports both even and odd modes launched by near field coupling with a dipole antenna perpendicular and parallel to the...

IET Microwaves Antennas and Propagation, 2022, 16 (4), pp.187-193. ⟨10.1049/mia2.12224⟩. ⟨hal-03592149⟩

• Article dans une revue

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Caroline Maye, Sylvie Lepilliet, Etienne Okada, Marc Margalef-Rovira, Issa Alaji, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution...

IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩. ⟨hal-03507882⟩

• Article dans une revue

Review on Unmanned Aerial Vehicle Assisted Sensor Node Localization in Wireless Networks: Soft Computing Approaches

Visalakshi Annepu, Deepika Rani Sona, Chinthaginjala Ravikumar, Kalapraveen Bagadi, Mohammad Alibakhshikenari, Ayman Althuwayb, Bader Alali, Bal Virdee, Giovanni Pau, Iyad Dayoub, Chan Hwang See, Francisco Falcone

Node positioning or localization is a critical requisite for numerous position-based applications of wireless sensor network (WSN). Localization using the unmanned aerial vehicle (UAV) is preferred over localization using fixed terrestrial anchor node (FTAN) because of low implementation complexity...

IEEE Access, 2022, 10, pp.132875-132894. ⟨10.1109/ACCESS.2022.3230661⟩. ⟨hal-03940270⟩

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

• Article dans une revue

Monolayer molybdenum disulfide switches for 6G communication systems

Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande

Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to...

Nature Electronics, 2022, 5, pp.367-373. ⟨10.1038/s41928-022-00766-2⟩. ⟨hal-03689339⟩

• Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way...

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

• Article dans une revue

Topological cavities in phononic plates for robust energy harvesting

Zhihui Wen, Yabin Jin, Penglin Gao, Xiaoying Zhuang, Timon Rabczuk, Bahram Djafari-Rouhani

Mechanical Systems and Signal Processing, 2022, 162, pp.108047. ⟨10.1016/j.ymssp.2021.108047⟩. ⟨hal-03542927⟩