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Communication dans un congrès

Cavity flow controlled with an array of magneto-mechanical micro-valves

Thomas Arnoult, Cécile Ghouila-Houri, Colin Leclercq, Aurélien Mazzamurro, Romain Viard, Eric Garnier, Denis Sipp, Alain Merlen, Abdelkrim Talbi, Philippe Pernod

This paper presents and discusses micro-magneto-mechanical valves designed for cavity flow control. Realized using microfabrication techniques and rapid prototyping, the micro-valves exhibit a small footprint and adequate performances for low-speed cavity flow control. An array of 15 micro-valves...

2021 IEEE Sensors, Oct 2021, Sydney, Australia. pp.1-4, ⟨10.1109/SENSORS47087.2021.9639871⟩. ⟨hal-03501259⟩

Article dans une revue

Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

Munique Kazar Mendes, Cécile Ghouila-Houri, Serria Hammami, Thomas Arnoult, Philippe Pernod, Abdelkrim Talbi

In this work, the effects of the N2 addition to the SF6 plasma used in the isotropic silicon etching of Microelectromechanical systems (MEMS) with Au components are investigated. A four-variables Doehlert design was implemented for optimizing the etching parameters (power, pressure, gas flow rate,...

Materials Letters, 2021, 285, pp.129058. ⟨10.1016/j.matlet.2020.129058⟩. ⟨hal-03330078⟩

Chapitre d'ouvrage

2 - Closed loop

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti, Cécile Ghouila-Houri, Abdelkrim Talbi, Gaëtan Lévêque, Bahram Djafari-Rouhani

A closed loop can be obtained by linear superposition of the two free ends of an open loop. Its main property is the double degeneracy of its states. The analytical expressions of its eigenvalues, eigenfunctions, and response function are presented. The case of two simultaneous identical measures...

Photonics, Part one: photonic paths, Elsevier, pp.15-19, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00011-3⟩. ⟨hal-03350752⟩

Communication dans un congrès

Analysis of the Susceptibility of the LoRa Communication Protocol in the Railway Electromagnetic Environment

Virginie Deniau, Thomas Vantroys, Norbert Becuwe, Christophe Gransart, Artur Nogueira de Sao Jose, Alexandre Boé, Eric Pierre Simon, Olivier Vlamynck, Florent Valenti, Jonathan Villain, Quentin Rivette

In the context of the digital transformation of railway transportation systems, railway operators investigate the potentialities of the IoT (Internet of Things) in order to optimize the maintenance operations on the vehicles and the infrastructures. One of the interest is to use IoT communication...

URSI GASS 2021, XXXIV General Assembly and Scientific Symposium (GASS) of the International Union of Radio Science (URSI), Aug 2021, Rome, Italy. 4p. ⟨hal-03265936⟩

Article dans une revue

Heuristically accelerated reinforcement learning for channel assignment in wireless sensor networks

Mohamed Sahraoui, Azeddine Bilami, Abdelmalik Taleb-Ahmed

In wireless sensor networks (WSNs), multi-channel communication represents an attractive field due to its advantage in improving throughput and delivery rate. However, the major challenge that faces WSNs is the energy constraint. To overcome the channel assignment problem in an energy-efficient way...

International Journal of Sensor Networks, 2021, 37 (3), pp.159. ⟨10.1504/IJSNET.2021.118877⟩. ⟨hal-03501786⟩

Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good...

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

Article dans une revue

H-Band Substrate-Integrated Discrete-Lens Antenna for High Data Rate Communication Systems

Kossaila Medrar, Loïc Marnat, Laurent Dussopt, Cybelle Belem-Gonçalves, Guillaume Ducournau, Cyril Luxey, Frédéric Gianesello

A substrate-integrated discrete-lens antenna manufactured in standard printed-circuit-board (PCB) technology is demonstrated in H-band (225-325 GHz). The arrays composed of phase-shifting unit cells and a waveguide-fed planar focal source are designed on a single PCB stack with five metal layers...

IEEE Transactions on Antennas and Propagation, 2021, 69 (7), pp.3677-3688. ⟨10.1109/TAP.2020.3044382⟩. ⟨hal-03546303⟩

Article dans une revue

Oxygen vacancy engineering of TaO$_x$-based resistive memories by Zr doping for improved variability and synaptic behavior

João Palhares, Yann Beilliard, F. Alibart, Everton Bonturim, Daniel de Florio, Fabio Fonseca, Dominique Drouin, Andre Ferlauto

Resistive switching (RS) devices are promising forms of non-volatile memory. However, one of the biggest challenges for RS memory applications is the device-to-device (D2D) variability, which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (V$_O$) conductive...

Nanotechnology, 2021, 32 (40), pp.405202. ⟨10.1088/1361-6528/ac0e67⟩. ⟨hal-03539056⟩

Article dans une revue

Piezoresistance in defect-engineered silicon

Heng Li, Abel Thayil, Chris Lew, Marcel Filoche, Brett Johnson, Jeff Mccallum, S. Arscott, Alistair C. H. Rowe

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current...

Physical Review Applied, 2021, 15 (1), 014046, 9 p. ⟨10.1103/PhysRevApplied.15.014046⟩. ⟨hal-03003310⟩

Article dans une revue

A new equivalent circuit scheme for grounded back-to-back GCPW-MS-GCPW transitions fabricated on a thin low-k substrate

Pierre-Vincent Dugué, Mohammed El Gibari, Mathieu Halbwax, Stephane Ginestar, Vanessa Avramovic, Jean-Pierre Vilcot, Hong Wu Li

We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, such transitions have been fabricated on a 20 μm-thick BCB (...

Progress In Electromagnetics Research Letters, 2021, 95, pp.33-42. ⟨10.2528/PIERL20093003⟩. ⟨hal-03054270⟩