Publicaciones

Affichage de 3761 à 3770 sur 16056


  • ART

Strong second-harmonic generation from Au–Al heterodimers

Jiyong Wang, Jérémy Butet, Gabriel David Bernasconi, Anne-Laure Baudrion, Gaëtan Lévêque, Andreas Horrer, Anke Horneber, Olivier Martin, Alfred Meixner, Monika Fleischer, Pierre-Michel Adam, Dai Zhang

Nanoscale, 2019, 11 (48), pp.23475-23481. ⟨10.1039/C9NR07644A⟩. ⟨hal-02420018⟩

  • ART

Preparation of Low-Resistance and Residue-free ITO Films for Large-scale 3D Displays

Zhiqiang Zhang, Xiang Yu, Wenjing Zhao, Kai Lu, Xinyou Ji, Rabah Boukherroub

ACS Applied Materials & Interfaces, 2019, 11 (49), pp.45903-45913. ⟨10.1021/acsami.9b16782⟩. ⟨hal-03090086⟩

  • COMM

Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

Javier Mateos, Tomas Gonzalez, Ignacio Iniguez-De-La-Torre, Sergio Garcia, Susana Perez, Christophe Gaquière, Guillaume Ducournau, Marie Lesecq, K Radhakrishnan, Dharmarasu Nethaji, Manvi Agrawal

With the aim of producing free-running Gunn oscillations in GaN devices, we propose the use of planar asymmetrically shaped nanodiodes. The key novelty of our approach is the use of an active layer of highly doped bulk GaN, and not the typical 2DEG created by an AlGaN/GaN heterojunction. To this...

2019 IEEE Asia-Pacific Microwave Conference (APMC), Dec 2019, Singapore, Singapore. pp.971-973, ⟨10.1109/APMC46564.2019.9038486⟩. ⟨hal-04038765⟩

  • COMM

GaN-based SSD structure for THz applications

Manvi Agrawal, Dharmarasu Nethaji, K Radhakrishnan, Christophe Gaquière, Guillaume Ducournau, Marie Lesecq, Javier Mateos, Tomas Gonzalez, Ignacio Iniguez-De-La-Torre, Sergio Garcia, Susana Perez

We report on the growth optimization of GaN-based self switching diode (SSD) structure on SiC, designed using Monte Carlo simulations, for the fabrication of nano-scale SSDs to reach THz emission as a result of Gunn oscillations. Crack-free epistructure with good epi-characteristics and uniformity...

2019 IEEE Asia-Pacific Microwave Conference (APMC 2019), Dec 2019, Singapour, Singapore. pp.213-215, ⟨10.1109/APMC46564.2019.9038338⟩. ⟨hal-04039379⟩