Publicaciones

Affichage de 41 à 50 sur 16170


  • Article dans une revue

Influence of electrical properties on thermal boundary conductance at metal/semiconductor interface

Quentin Pompidou, Juan Carlos Acosta Abanto, M. Brouillard, Nicolas Bercu, L. Giraudet, Rami Sheikh, C. Adessi, S. Mérabia, S. Gomès, Pierre-Olivier Chapuis, J.-F. Robillard, Mihai Chirtoc, N. Horny

Recent experimental investigations have demonstrated that doping a semiconductor is a route to increase the thermal boundary conductance at metal/semiconductor interfaces. In this work, the influence of the electrical properties on heat transfer across metal/doped semiconductor junctions is...

Journal of Applied Physics, 2026, 139 (2), pp.025302. ⟨10.1063/5.0303997⟩. ⟨hal-05468421⟩

  • Article dans une revue

Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses

Nikhil Garg, Ismael Balafrej, Joao Henrique Quintino Palhares, Laura Bégon-Lours, Davide Florini, Donato Francesco Falcone, Tommaso Stecconi, Valeria Bragaglia, Bert Jan Offrein, Jean-Michel Portal, Damien Querlioz, Yann Beilliard, Dominique Drouin, Fabien Alibart

The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired learning mechanisms, allowing for real-time adaptation while using low-power. In-memory computing with nanoscale...

Communications Materials, 2026, 7, pp.19. ⟨10.1038/s43246-025-01033-5⟩. ⟨hal-05480282⟩

  • Pré-publication, Document de travail

Competing effects of charge-carrier and impurity scattering limiting phonon heat conduction in heavily-doped silicon

Raja Sen, Juan Carlos Acosta Abanto, Mélanie Brouillard, Séverine Gomès, Jean-François Robillard, Alessandro Ciavatta, Lorenzo Paulatto, Nathalie Vast, Jérôme Saint-Martin, Jelena Sjakste, Pierre-Olivier Chapuis

With respect to undoped semiconductors, thermal transport by phonons is limited by two additional mechanisms when doping increases: charge-carrier and impurity scattering. Previous works provided contradicting conclusions on the dominant doping-induced scattering mechanism in silicon. In this work...

2026. ⟨hal-05451267⟩

  • Article dans une revue

On the importance of Ni–Au–Ga interdiffusion in the formation of a Ni–Au/p-GaN ohmic contact

Jules Duraz, Hassen Souissi, Maksym Gromovyi, David Troadec, Téo Baptiste, Géraldine Hallais, Nathaniel Findling, Phuong Vuong, Rajat Gujrati, Thi May Tran, Jean-Paul Salvestrini, Maria Tchernycheva, Suresh Sundaram, Abdallah Ougazzaden, Gilles Patriarche, Sophie Bouchoule

High-resolution transmission electron microscopy (TEM) coupled to energy dispersive X-ray spectroscopy (EDX) is used to clarify the exact role of Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing under an oxygen atmosphere of a Ni-Au/p-GaN contact. It is shown that...

Journal of Applied Physics, 2026, 139 (2), pp.025102. ⟨10.1063/5.0295857⟩. ⟨hal-05473565v2⟩