Publicaciones

• Article dans une revue

Topological Interface States in a One-Dimensional Mesoscopic Crystal Using Su-Schrieffer-Heeger Model

Noura Ezzahni, Mohammed Elaouni, Soufyane Khattou, Madiha Amrani, Mohamed El Ghafiani, Yamina Rezzouk, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We investigate the existence of topological interface states between two periodic comb-like mesoscopic crystals with different topological properties based on the Su-Schrieffer-Heeger (SSH) model. This model enables us to predict the existence of topological interface states between two connected...

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.75-84. ⟨10.1007/978-981-97-9975-6_8⟩. ⟨hal-05039448⟩

• Article dans une revue

Two Types of Bound States in the Continuum in Photonic Comb Structure

Yamina Rezzouk, Soufyane Khattou, Mohamed El Ghafiani, Madiha Amrani, El Houssaine El Boudouti, Abdelkrim Talbi, Bahram Djafari-Rouhani

We propose the design of a comb-shaped cavity that can support several BICs when attached to a waveguide. The cavity consists of a finite comb made of one stub of length placed between two stubs of length via two guides of length and the whole comb is attached vertically along a waveguide. In order...

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.45-53. ⟨10.1007/978-981-97-9975-6_5⟩. ⟨hal-05039914⟩

• Article dans une revue

Investigation of the Effect of the Nitrogen on the Band Offset and the Intersubband Absorption Coefficient of the GaNxAs1-x-ySby/GaSb Quantum Well Structures

L. Chenini, A. Aissat, S. Ammi, J. Vilcot

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.85-92. ⟨10.1007/978-981-97-9975-6_9⟩. ⟨hal-05039455⟩

• Article dans une revue

Transcutaneous delivery of disease-specific PI3K/Akt/mTOR inhibitor-based hybrid nanoparticles in hydrogel system for the management of psoriasis: Insights from in vivo studies

Roshan Keshari, Rupali Bagale, Sulagna Rath, Abhijit De, Rinti Banerjee, Shamik Sen, Rohit Srivastava

International Journal of Pharmaceutics, 2025, 672, pp.125325. ⟨10.1016/j.ijpharm.2025.125325⟩. ⟨hal-04971131⟩

• Communication dans un congrès

Class-Specific Dataset Splitting for YOLOv8: Improving Real-Time Performance in NVIDIA Jetson Nano for Faster Autonomous Forklifts

Chaouki Tadjine, Abdelkrim Ouafi, Abdelmalik Taleb-Ahmed, Yassin El Hillali

This research examines a class-specific YOLOv8 model setup for real-time object detection using the Logistics Objects in Context dataset, specifically looking at how it can be used in high-speed autonomous forklifts to enhance obstacle detection. The dataset contains five common object classes in...

Proceedings of the 14th International Conference on Pattern Recognition Applications and Methods, Feb 2025, Porto, Portugal. pp.788-793, ⟨10.5220/0013308700003905⟩. ⟨hal-04977371⟩

• Article dans une revue

Modeling of Surface-Emitting Terahertz Quantum Cascade Laser Based on Difference Frequency Generation

A Hamadou, Jean-Luc Thobel

In this paper, we propose a simple method to calculate the THz field and THz power generated via intracavity difference frequency generation in a dual-wavelength mid-infrared quantum cascade laser. The approach is based on using a surface emission scheme in the nonlinear waveguide. The results show...

Journal of Nano and Electronic Physics, 2025, 17 (1), pp.01012. ⟨10.21272/jnep.17(1).01012⟩. ⟨hal-04984037⟩

• Thèse

Caractérisation avancée des interfaces de transistors HEMT pour l'électronique de puissance : corrélation entre propriétés chimiques, structurales et électriques, Advanced characterization of HEMT interfaces for power electronics : correlation between chemical, structural and electrical properties

Kirène Gaffar

Le nitrure de gallium (GaN) est un matériau particulièrement adapté à la fabrication de circuits intégrés hautes performances fonctionnant à haute fréquence. La technologie GaN permet notamment d'améliorer le niveau de puissance, le rendement et la compacité des transistors HEMTs (Transistors..., Gallium nitride (GaN) is a well-suited material particularly for the manufacture of high-performance integrated circuits operating at high frequencies. In particular, GaN technology makes it possible to improve the power level, efficiency and compactness of HEMTs (High Electron Mobility Transistors...

Matériaux. Université Paris-Saclay, 2025. Français. ⟨NNT : 2025UPAST023⟩. ⟨tel-05262054⟩

• Article dans une revue

Acoustic tweezers for targeted drug delivery

Léa Guerassimoff, Stefaan C de Smedt, Félix Sauvage, Michael Baudoin

Acoustic tweezers are a highly promising technology for targeted drug delivery thanks to their unique capabilities: (i) they can effectively operate in both in vitro and in vivo environments, (ii) they can manipulate a wide range of particle sizes and materials, and (iii) they can exert forces...

Advanced Drug Delivery Reviews, 2025, 220, pp.115551. ⟨10.1016/j.addr.2025.115551⟩. ⟨hal-05002823⟩

• Communication dans un congrès

GaN-on-Silicon vertical devices

F Medjdoub

60th Annual Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), Feb 2025, Fort Myers, FL, United States. ⟨hal-05344683⟩

• Article dans une revue

Interface‐Enhanced and Self‐Guided Growth of 2D Interlayer Heterostructure Wafers with Vertically Aligned Van Der Waals Layers

Yi Hu, Xingli Wang, Xingguo Wang, Yue Gong, Zikun Tang, Guangchao Zhao, Weng Hou Yip, Jingyi Liu, Seoung Bum Lim, Mohamed Boutchich, Philippe Coquet, Shu Ping Lau, Beng Kang Tay

Abstract 2D heterostructures have garnered significant interest in the scientific community owing to their exceptional carrier transport properties and tunable band alignment. The fabrication of these heterostructures on a wafer scale is crucial for advancing industrial applications but remains...

Advanced Science, 2025, ⟨10.1002/advs.202412690⟩. ⟨hal-04968165⟩