Publicaciones

• OTHER

[Séminaire] Rétine artificielle: approche biomimétique ultra efficace en énergie

Virginie Hoel

3ème Séminaire humAIn « Intelligence Artificielle et Santé »,17 juin, 2019. ⟨hal-03341037⟩

• COMM

Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate

M.R. Irekti, Marie Lesecq, N. Defrance, M. Boucherta, Eric Frayssinet, Yvon Cordier, J.G. Tartarin, Jean-Claude de Jaeger

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-04039402⟩

• COMM

AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

Idriss Abid, Riad Kabouche, Malek Zegaoui, C. Bougerol, Rémi Comyn, Yvon Cordier, F Medjdoub

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356886⟩

• COMM

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Matteo Borga, Matteo Meneghini, Davide Benazzi, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

In this work an extensive analysis on the leakage current of three samples obtained by stopping the epitaxial growth of a GaN-on-Silicon stack is presented. We studied the current leakage behavior and the breakdown voltage as a function of the ambient temperature, as well as the trapping phenomena...

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356883⟩

• COMM

Scaling of AlN/GaN HEMT for millimeter-wave power applications

K. Harrouche, Riad Kabouche, Malek Zegaoui, F Medjdoub

In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a...

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02356889⟩

• COMM

MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic...

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-04038786⟩

• THESE

Artificially induced anisotropy of thermal conductivity in 2D Si phononic membranes, Anisotropie de la conductivité thermique artificiellement induite dans des membranes phononiques en silicium

Stanislav Didenko

This thesis work is devoted to the development of practical mechanisms for the heat guiding in silicon low-dimensional nanostructures. The motivation comes from both the field of IC thermal management and emerging technology of Si-based thermoelectric devices, where directional heat guiding can..., Ce travail de thèse est consacré au développement de mécanismes pratiques pour le guidage de chaleur dans des nanostructures de silicium de faible dimension. Les applications vont du domaine de la gestion thermique des circuits intégrés aux technologies et matériaux thermoélectriques émergents à...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2019. English. ⟨NNT : 2019LILUI048⟩. ⟨tel-03622454⟩

• POSTER

Evaporation of Gold Nanofluid Sessile Drops on Heated Substrate

Rabah Boukherroub, Julien Carlier, Souad Harmand, Ibrahim Zaaroura

In this paper, experiments investigating the evaporation of gold nanofluid droplets to evaluate the effect of the particle size (5 and 10 nm) and concentrations (1 and 4% Cv), were executed on a hydrophobic silicon substrate at different surface temperature (amb, 60 and 80 °C). A drop shape...

TechConnect World Innovation Conference and Expo 2019, Jun 2019, Boston, MA, United States. , pp.37-41. ⟨hal-03582377⟩

• COMM

Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V

Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Riad Kabouche, Idriss Abid, Malek Zegaoui, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

The aim of this work is to investigate the role of the epitaxial structure on the low trapping effects of GaN-on-silicon heterostructures use for power application. Structures with and without superlattices (SL) are analysed. In particular, it is shown that the insertion of SL into the buffer...

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, cabourg, France. ⟨hal-02356881⟩

• COMM

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits

N. Defrance, Etienne Okada, Florent Albany, Nathalie Labat, Nathalie Malbert, Éric Frayssinet, Yvon Cordier, Flavien Cozette, Maher, Hassan, E Walasiak, François Lecourt

WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02502499⟩