Publicaciones

Affichage de 4421 à 4430 sur 16054


  • COMM

Non-volatile RF and mm-wave switches based on monolayer hBN

Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Vanessa Avramovic, Etienne Okada, Jack Lee, Henri Happy, Deji Akinwande

Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory...

IEEE International Electron Devices Meeting, IEDM 2019, Session 9 - Microwave, Millimeter Wave and Analog Technology - Compound Semiconductors and Novel Materials for RF and mmWave, Dec 2019, San Francisco, United States. paper 9.5, 4 p., ⟨10.1109/IEDM19573.2019.8993470⟩. ⟨hal-03335212⟩

  • COMM

[Invited] Filière industrie électronique: acteurs, plan d’action et projets structurants

Virginie Hoel

59ème Congrès Annuel du Club EEA, Club EEA, Jun 2019, Rennes, France. ⟨hal-03340968⟩

  • COMM

Experimental investigation of V2I radio channel in an arched tunnel

M Yusuf, E Tanghe, L Martens, Pierre Laly, Davy Gaillot, M Lienard, Pierre Degauque, W Joseph

13th European Conference on Antennas and Propagation, EuCAP 2019, Mar 2019, Krakow, Poland. 137-141, https://ieeexplore.ieee.org/document/8739526. ⟨hal-03346243⟩