Publicaciones

Affichage de 4541 à 4550 sur 16170


  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/4]

Raffaele Pisano

2019. ⟨hal-04510994⟩

  • Communication dans un congrès

22nm ultra-thin body and buried oxide FDSOI RF noise performance

Ousmane Kane, Luca Lucci, Pascal Scheiblin, Sylvie Lepilliet, Francois Danneville

The drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits suitable for millimeter applications. In this context, this paper presents the RF and noise characterization (up to 110...

IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Jun 2019, Boston, United States. ⟨10.1109/RFIC.2019.8701740⟩. ⟨hal-03272699⟩

  • Communication dans un congrès

Multiple antenna receiver under impulsive SαS noise

Nicolas de Araujo Moreira, Laurent Clavier

In a usual MIMO framework when noise is assumed Gaussian, the channel matrix can be estimated with a Least Square approach. In addition, the Euclidean distance is optimal to detect the transmitted symbol. However, in dynamic interference, the Gaussian assumption is no longer valid. In this case,...

WCNC 2019, 17th IEEE Wireless Communications and Networking Conference, Apr 2019, Marrakech, Morocco. 6 p., ⟨10.1109/WCNC.2019.8885790⟩. ⟨hal-03270115⟩

  • Article dans une revue

Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices

Saliha Ouendi, Cassandra Arico, Florent Blanchard, Jean-Louis Codron, Xavier Wallart, Pierre-Louis Taberna, Pascal Roussel, Laurent Clavier, Patrice Simon, Christophe Lethien

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb<sub>2</sub>O<sub>5</sub> films onto Pt current collectors deposited on Si wafer. While T-Nb<sub>2</sub>O<sub>5</sub> polymorph is obtained by further annealing at 750 °C, the...

Energy Storage Materials, 2019, 16, pp.581-588. ⟨10.1016/j.ensm.2018.08.022⟩. ⟨hal-02135683⟩