Publicaciones

• Communication dans un congrès

Robust and Simple Log-Likelihood Approximation for Receiver Design

Yasser Mestrah, Anne Savard, Alban Goupil, Guillaume Gelle, Laurent Clavier

Wireless Communications and Networking Conference (WCNC), 2019, Marrakesh, Morocco. pp.1-6, ⟨10.1109/WCNC.2019.8886114⟩. ⟨hal-02503135⟩

• Article dans une revue

Numerical Modelling of Vibration Characteristics of a Partially Metallized Micro Electromechanical System Resonator Disc

Ismail Naciri, Abdessamad Rguiti, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Faniry Emilson Ratolojanahary, J. G. Yu, Youssef Belkassmi, Ali El Moussati

In this paper, we report an extension of a polynomial and numerical vibrational characterization of an annular piezoelectric disc resonator partially covered with electrodes. The three governing partial differential equations of motion are solved to provide the frequency response of the...

Acta Acustica united with Acustica, 2019, 105 (6), pp.1164-1172. ⟨10.3813/AAA.919393⟩. ⟨hal-03148966⟩

• Communication dans un congrès

Mesure indirecte des performances de LLR approché

Yasser Mestrah, Anne Savard, Alban Goupil, Guillaume Gelle, Laurent Clavier

Les réseaux sans fils sont de plus en plus denses et hétérogènes, entraînant l’accroissement très significatif de l’impact des interférences. De nombreux travaux ont montré la nature impulsive de cette interférence et la nécessité de modifier le calcul de la vraisemblance nécessaire au décodage....

GRETSI, 2019, Lille, France. ⟨hal-02962832⟩

• Article dans une revue

Topological valley, pseudospin, and pseudospin-valley protected edge states in symmetric pillared phononic crystals

Wei Wang​, Bernard Bonello, Bahram Djafari-Rouhani, Yan Pennec

We present a symmetric double-sided pillared phononic crystal (PPnC) where either quantum spin Hall effect (QSHE) or quantum valley Hall effect (QVHE) is emulated by solely imposing different perturbations to the geometry. When occurring at the deep subwavelength scale, the valley-polarized edge...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 100 (14), pp.140101. ⟨10.1103/PhysRevB.100.140101⟩. ⟨hal-02323713⟩

• Article dans une revue

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H. Li, C.T.K. Lew, B.C. Johnson, J.C. Mccallum, S. Arscott, A.C.H. Rowe

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum...

Physical Review Applied, 2019, 11 (4), pp.044010. ⟨10.1103/PhysRevApplied.11.044010⟩. ⟨hal-02345325⟩

• Article dans une revue

Biomimetic surface modifications of stainless steel targeting dairy fouling mitigation and bacterial adhesion

Sawsen Zouaghi, Séverine Bellayer, V. Thomy, Thomas Dargent, Yannick Coffinier, Christophe André, Guillaume Delaplace, Maude Jimenez

Food and Bioproducts Processing, 2019, 113, pp.32-38. ⟨10.1016/j.fbp.2018.10.012⟩. ⟨hal-02322038⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 8/3]

Raffaele Pisano

2019. ⟨hal-04510995⟩

• Article dans une revue

Optimization of surface treatment on MEMS probes for single-cell capture and release

Kensaku Hayashi, Momoko Kumemura, Shohei Kaneda, Vivek Menon, Laurent Jalabert, Saeko Tachikawa, Mehmet Tarhan, Teruo Fujii, Beomjoon Kim, Hiroyuki Fujita

Micro-electromechanical systems (MEMS) tweezers developed for the trapping and characterization of bio molecules such as DNA are also capable of cell handling, which will enable further application involving single cell characterization. However, cellular adhesion to Si tweezers surfaces can...

Sensors and Materials, 2019, 31 (9), pp.2873. ⟨10.18494/SAM.2019.2322⟩. ⟨hal-03153240⟩

• Communication dans un congrès

A method to determine wide bandgap power devices packaging interconnections

Loris Pace, N. Defrance, Jean-Claude de Jaeger, Arnaud Videt, Nadir Idir

Wide Bandgap (WBG) power devices show very good characteristics for high frequency operation in power converters, leading to a better power integration by reducing size and weight of passive components. Access parasitics such as resistances and inductances related to packaging and interconnections...

23rd IEEE Workshop on Signal and Power Integrity (SPI), Jun 2019, Chambery, France. pp.1-4, ⟨10.1109/SaPIW.2019.8781641⟩. ⟨hal-03276911⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14...

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩