Publicaciones

• ART

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

Ahlem Lebbad, Laid L.KERKACHE Kerkache, Abdelhamid Layadi, Floriane Leroy, Bandar Alshehri, El Hadj Dogheche

Series of indium tin oxide (ITO) thin films were deposited onto Si(100) substrate by RF sputtering. The film thickness ranges from 61 to 768 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) experiments were performed to study the structure and the...

Bulletin of Materials Science, 2018, 41 (3), pp.74. ⟨10.1007/s12034-018-1595-1⟩. ⟨hal-03183493⟩

• ART

Optimization and improvement of a front graded bandgap CuInGaSe2 solar cell

Abdelkader Aissat, H. Arbouz, Jean-Pierre Vilcot

This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from Egmax (at the junction limit) to Egmin (in the vicinity of the rear contact).We introduce an effective absorption...

Solar Energy Materials and Solar Cells, 2018, 180, pp.381-385. ⟨10.1016/j.solmat.2017.09.017⟩. ⟨hal-02409503⟩

• COMM

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

Bilal Hassan, Adrien Cutivet, Ali Soltani, Christophe Rodriguez, François Boone, Hassan Maher, Meriem Bouchilaoun

The coumpoud semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310052⟩

• COMM

Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices

Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso

For the first time, we demonstrate recombination-induced defect generation in InGaN/GaN-based optoelectronic devices, by stressing InGaN/GaN high periodicity MQW structures: the results will significantly improve the understanding of the degradation of LEDs, lasers and photodetectors, sinceso...

COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩

• COMM

Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism

Marie-Clara Pépin, Hassan Maher, Christophe Rodriguez, Ali Soltani

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310041⟩

• COMM

Scaling of GaN HEMTs Thermal Transient Characteristics

Adrien Cutivet, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, François Boone, Hassan Maher

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310050⟩

• COMM

Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer

Meriem Bouchilaoun, Ali Soltani, Christophe Rodriguez, Abdelatif Jaouad, Hassan Maher

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310044⟩

• COMM

[Invité] Livraison transdermique de médicaments : Au-delà de l’état de l’art

Rabah Boukherroub

Journée de la recherche, Faculté des Sciences et Technologies, Université de Lille, May 2018, Villeneuve d'ascq, France. ⟨hal-04618952⟩

• COMM

Evaluation of the Electric Field Amplitude in a MSRC From Power Measurement with a monopole

Abdourachid Ibrahim, Lamine Kone, S. Baranowski

The goal of the work presented in this paper is to demonstrate that the electric field inside a Mode Stirred Reverberation Chamber (MSRC) can be evaluated with short monopoles, mounted on the walls of the MSRC. Indeed, the electric (E) field amplitude inside a MSRC can be deduced from power...

2018 2nd URSI Atlantic Radio Science Meeting (AT-RASC), May 2018, Gran Canaria, Spain. pp.1-4, ⟨10.23919/URSI-AT-RASC.2018.8471605⟩. ⟨hal-03578476⟩

• COMM

[Invited] Exploring Accuracies & Scientific Truths in the Exacts Sciences

Raffaele Pisano

International Workshop ETHICA: The Distortion of scientific information, Polo Universitario, Asti, Italy, May 2018, Asti-Alba (CN), Italy, Italy. ⟨hal-04518361⟩