Publicaciones

Affichage de 481 à 490 sur 16055

ART

Effects of Temperature and Random Forces in Phase Transformation of Multi-Stable Systems

Giuseppe Florio, Stefano Giordano, Giuseppe Puglisi

<div><p>Multi-stable behavior at the microscopic length-scale is fundamental for phase transformation phenomena observed in many materials. These phenomena can be driven not only by external mechanical forces but are also crucially influenced by disorder and thermal fluctuations....

Entropy, 2024, 26, ⟨10.3390/e26121109⟩. ⟨hal-04862962⟩

THESE

Micromachining and Packaging of Smart Probes for mmW on-Wafer Measurements, Micro-usinage et packaging de sondes actives pour les mesures mmW sur tranche

Maya Alawar

Advanced silicon technologies, such as BiCMOS B55X from STMicroelectronics, which target fT/fmax cutoff frequencies above 400 GHz, are enabling the development of silicon circuits in the 140-220 GHz range (G-band). To validate these technologies, microwave characterization methods for on-wafer..., Les technologies silicium avancées, telles que le BiCMOS B55X de STMicroelectronics, visant des fréquences de coupure fT/fmax supérieures à 400 GHz, permettent le développement de circuits dans la gamme 140-220 GHz (bande G). Pour valider ces technologies, les méthodes de caractérisation micro-...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2024. English. ⟨NNT : 2024ULILN036⟩. ⟨tel-04965550⟩

THESE

Steering system for a neurosurgical microrobot, Système de navigation d’un microrobot neurochirurgical

Oscar Gallardo

Current neurosurgical tools are limited by their rigid components, which constrain them to straight-line trajectories, making it challenging to access deep brain regions. To address this limitation, Robeauté has developed a minimally invasive microrobot capable of navigating along a 3D trajectory...., Les outils neurochirurgicaux actuels sont limités par leur structure rigide, qui les contraint à des trajectoires en ligne droite, rendant difficile l'accès aux régions profondes du cerveau. Pour répondre à cette limitation, Robeauté a développé un microrobot minimalement invasif, capable de...

Micro and nanotechnologies/Microelectronics. Université Polytechnique Hauts-de-France; Institut national des sciences appliquées Hauts-de-France, 2024. English. ⟨NNT : 2024UPHF0036⟩. ⟨tel-04978355⟩

THESE

Design, fabrication and simulation of next generation robust GaN HEMTs for millimeter wave applications, Conception, fabrication et simulation de HEMTs GaN robustes de prochaine génération pour les applications millimétriques

François Grandpierron

In recent years, significant progress has been achieved with GaN high electron mobility transistors (HEMTs) in advancing the next generation of 5G networks, radar systems, and satellite communications. However, to further enhance power amplification and high-frequency operation (>30 GHz),..., Ces dernières années, des avancées significatives ont été réalisées avec les transistors à haute mobilité électronique en GaN (HEMTs) contribuant à l'évolution de la prochaine génération de réseaux 5G, de systèmes radar et de communications par satellite. Cependant, pour améliorer davantage l...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2024. English. ⟨NNT : 2024ULILN045⟩. ⟨tel-05234737⟩

THESE

États de Tamm optiques dans les nanostructures photoniques pour application aux capteurs, Optical Tamm states in photonic nanostructures for sensing applications

Baptiste Mathmann

Les capteurs d'indice de réfraction sont très largement employés dans l'industrie et la santé. Ils trouvent des applications aussi bien en contrôle de qualité que pour la détection d'espèces en chimie et biochimie. Si l'utilisation de plasmons de surface pour ces applications..., Refractive index sensors are widely used in industry and health sectors. They find applications in quality control as well as for species detection in chemistry and biochemistry. Although the use of surface plasmons for these applications is widespread, they nevertheless suffer from shortcomings,...

Physique [physics]. Centrale Lille Institut, 2024. Français. ⟨NNT : 2024CLIL0027⟩. ⟨tel-04826484⟩

UNDEFINED

On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact

Jules Duraz, Hassen Souissi, Maksym Gromovyi, David Troadec, Teo Baptiste, Nathaniel Findling, Phuong Vuong, Rajat Gujrati, Thi May Tran, Jean-Paul Salvestrini, Maria Tchernycheva, Suresh Sundaram, Abdallah Ougazzaden, Gilles Patriarche, Sophie Bouchoule

The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-...

2025. ⟨hal-04850843⟩

ART

In-situ chemical grafting of aminophenyl and RGD peptide on an equimolar high-entropy HfNbTaTiZr alloy: electrochemical behavior and surface characterization

Farzin Arjmand, Alima Chali, Youssef Snoussi, David Troadec, Gilles Patriarche, Loic Perriere, Jean-Philippe Couzinié, Elisa Peroni, Olivier Monasson, Michel Boissière, Mohamed Mehdi Chehimi, Souad Ammar-Merah, Guy Dirras

The in-situ chemical grafting conditions of aminophenyl on an equimolar high-entropy HfNbTaTiZr alloy were optimized using an experimental design strategy. A fluorescent ArgGlyAsp peptide molecule was also synthesized and mounted on the grafted aryl group layer as a preliminary investigation toward...

Emergent Materials, 2024, ⟨10.1007/s42247-024-00963-z⟩. ⟨hal-04854358⟩