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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Christophe Morelle, Didier Theron, Joff Derluyn, Stefan Degroote, Marianne Germain, Victor Zhang, Lionel Buchaillot, Bertrand Grimbert, Pascal Tilmant, Francois Vaurette, Isabelle Roch-Jeune, Virginie Brandli, Vanessa Avramovic, Etienne Okada, Marc Faucher

Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known that tensile stress can be used to increase the resonant frequency. Here...

Microsystem Technologies, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩. ⟨hal-03183510⟩