Publicaciones

Affichage de 5061 à 5070 sur 16170


  • Article dans une revue

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Christophe Morelle, Didier Theron, Joff Derluyn, Stefan Degroote, Marianne Germain, Victor Zhang, Lionel Buchaillot, Bertrand Grimbert, Pascal Tilmant, Francois Vaurette, Isabelle Roch-Jeune, Virginie Brandli, Vanessa Avramovic, Etienne Okada, Marc Faucher

Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known that tensile stress can be used to increase the resonant frequency. Here...

Microsystem Technologies, 2018, 24 (1), pp.371-377. ⟨10.1007/s00542-017-3293-0⟩. ⟨hal-03183510⟩

  • Article dans une revue

An extension of the RiMAX multipath estimation algorithm for ultra-wideband channel modeling

Brecht Hanssens, Emmeric Tanghe, Davy Gaillot, M. Lienard, Claude Oestges, David Plets, Luc Martens, Wout Joseph

This work presents an extension of the high-resolution RiMAX multipath estimation algorithm, enabling the analysis of frequency-dependent propagation parameters for ultra-wideband (UWB) channel modeling. Since RiMAX is a narrowband algorithm, it does not account for the frequency-dependency of the...

EURASIP Journal on Wireless Communications and Networking, 2018, 2018 (1), pp.164. ⟨10.1186/s13638-018-1177-3⟩. ⟨hal-03185604⟩

  • Communication dans un congrès

Conception and realization of highly selective band-pass filters in Ka-band built on thin polymer films

Mohammed El Gibari, Sara Bretin, Patrick Derval, S. Ginestar, Guillaume Lirzin, Hong Wu Li

A novel structure of high performance narrow band-pass filters on thin polymer film is reported in this paper. It's composed of two microstrip resonators placed between two via-free microstrip-grounded coplanar waveguide transitions. It combines therefore compactness, low-cost, fabrication...

29th International Conference on Microelectronics, ICM 2017, Dec 2017, Beirut, Lebanon. pp.1-4, ⟨10.1109/ICM.2017.8268896⟩. ⟨hal-01774145⟩