Publicaciones

Affichage de 5171 à 5180 sur 16055


  • COMM

A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices

Steven Duffy, Brahim Benbakhti, Wei Zhang, Karol Kalna, Khaled Ahmeda, Maher, Hassan, Ali Soltani

47th European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. ⟨hal-02310067⟩

  • COMM

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

Romain Pécheux, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Etienne Okada, Malek Zegaoui, F Medjdoub

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT...

ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. pp.228-231, ⟨10.1109/ESSDERC.2017.8066633⟩. ⟨hal-03028460⟩

  • COMM

Numerical and experimental demonstration of the electrical Bragg band gaps in piezoelectric plates with a periodic array of electrodes

Clement Vasseur, Charles Croënne, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, Claude Prevot, Paolo Martins, Mai Pham-Thi

A piezoelectric plate, poled along its thickness, that supports on its top surface a periodic grating of electrodes is considered. If wave propagation is assumed along the length of the plate, one demonstrates that an electrical Bragg band gap can be observed, depending on the electrical boundary...

2017 IEEE International Ultrasonics Symposium (IUS), Sep 2017, Washington, United States. paper 6H-2, 4 p., ⟨10.1109/ULTSYM.2017.8092676⟩. ⟨hal-03299385⟩

  • POSTER

Prétraitement perceptuel pour l’optimisation du codage HEVC

Eloïse Vidal, François-Xavier Coudoux, Patrick Corlay, Christine Guillemot

Actes du XXVIème Colloque GRETSI, Sep 2017, Juan-les-Pins, France. ⟨hal-03582751⟩

  • COMM

Electronic structure and optical properties of 2D nanostructured semiconductors

Christophe Delerue, Athmane Tadjine

NanoGe September Meeting, Sep 2017, Barcelona, Spain. ⟨hal-03317607⟩