Publicaciones

Affichage de 5721 à 5730 sur 16058


  • COMM

Conception d'un doubleur de fréquence +4 dBm en technologie BiCMOS 55 nm en bande W

Walid Aouimeur, José Moron Guerra, Estelle Lauga-Larroze, Jean-Daniel Arnould, Thomas Quémerais, Christophe Gaquière

Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, May 2016, Toulouse, France. ⟨hal-02019237⟩

  • COMM

From Random to Periodic: Perspectives in Plasmomechanics

Roberto Caputo, Joseph Marae-Djouda, Nabil Mahid, Gaëtan Lévêque, Abdellatif Akjouj, Pierre-Michel Adam, Thomas Maurer

EMN Meeting on Light-Matter interactions, May 2016, Singapore, Singapore. ⟨hal-02481673⟩

  • POSTER

Investigation of refractive indices into TiO2 films using prism coupling technique for nanomedicine applications

Bandar Alshehri, Ali Ahmed Alshehri, L. Miftah El Kheir, Karim Dogheche, T. Gharbi, El Hadj Dogheche

European Materials Research Society Spring Meeting, E-MRS Spring 2016, May 2016, Lille, France. ⟨hal-03553170⟩

  • POSTER

Zinc oxide hierarchical nanostructures as photo anodes for PbS quantum dots sensitized solar cells

Basma El Zein, M. Zunic, A. Albadri, Y. Al Youssef, El Hadj Dogheche

European Materials Research Society Spring Meeting, E-MRS Spring 2016, May 2016, Lille, France. ⟨hal-03553234⟩

  • ART

Order and progress

Christophe Delerue

Nature Materials, 2016, 15 (5), pp.498-499. ⟨10.1038/nmat4597⟩. ⟨hal-02906818⟩

  • ART

First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor

Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, N. Defrance, Etienne Okada, Yvon Cordier, Benjamin Damilano, Gema Tabares Jimenez, Abel Ebongue, Virginie Hoel

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V-GS = 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 x 50 x 0.1 mu m(2)...

IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩. ⟨hal-03270110⟩

  • ART

Surface acoustic wave characterization of optical sol-gel thin layers

Dame Fall, François Compoint, Marc Duquennoy, Hervé Piombini, Mohammadi Ouaftouh, Frédéric Jenot, Bogdan Piwakowski, Philippe Belleville, Chrystel Ambard

Controlling the thin film deposition and mechanical properties of materials is a major challenge in several fields of application. We are more particularly interested in the characterization of optical thin layers produced using sol-gel processes to reduce laser-induced damage. The mechanical...

Ultrasonics, 2016, 68, pp.102-107. ⟨10.1016/j.ultras.2016.02.006⟩. ⟨hal-03810583⟩

  • ART

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Bilal Janjua, Abderrahim Ramdane, Gilles Patriarche, Tien Khee Ng, Boon Seng Ooi, Didier Decoster, El Hadj Dogheche

In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL...

MRS Advances, 2016, 1 (23), pp.1735-1742. ⟨10.1557/adv.2016.417⟩. ⟨hal-03780652⟩