Publicaciones

Affichage de 5841 à 5850 sur 16167


  • Article dans une revue

Microwave and millimeter wave properties of vertically-aligned single wall carbon nanotubes films

Kamel Haddadi, C. Tripon-Canseliet, Q. Hivin, Guillaume Ducournau, E. Teo, P. Coquet, B. K. Tay, Sylvie Lepilliet, Vanessa Avramovic, J. Chazelas, Didier Decoster

We present the experimental determination of the complex permittivity of vertically aligned single wall carbon nanotubes (SWCNTs) films grown on quartz substrates in the microwave regime from 10 MHz up to 67 GHz, with the electrical field perpendicular to the main axis of the carbon nanotubes (CNTs...

Journal of Electronic Materials, 2016, 45 (5), pp.2433-2441. ⟨10.1007/s11664-016-4362-3⟩. ⟨hal-03224656⟩

  • Article dans une revue

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, F Medjdoub, R. Quere

no abstract

IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩. ⟨hal-01394908⟩

  • N°spécial de revue/special issue

Guest Editorial Introduction to the Special Issue on Terahertz Near-Field Microscopy and Applications

Haewook Han, Giles Davies, Tahsin Akalin, Koichiro Tanaka

IEEE Transactions on Terahertz Science and Technology, 6, pp.353-355, 2016, ⟨10.1109/TTHZ.2016.2549861⟩. ⟨hal-03680777⟩

  • Article dans une revue

Propagation of acoustic wave’s motion in orthotropic Cylinders of infinite length

Ismail Naciri, Lahoucine Elmaimouni, Jean-Etienne Lefebvre, Faniry Emilson Ratolojanahary, Tadeusz Gryba

We report, in the present work, a numerical method for investigating guided waves propagation in a homogeneous infinite cylinder composed of elastic material. This method makes use of Legendre polynomials series and harmonic function to express different displacement components which are introduced...

Maghrebian Journal of Pure and Applied Science , 2016, 2 (1), pp.32-38. ⟨10.48383/IMIST.PRSM/mjpas-v2i1.4214⟩. ⟨hal-04080863⟩

  • Article dans une revue

Influence of Doping and Tunneling Interface Stoichiometry on n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki Diode Behavior

Salim El Kazzi, A Alireza, Caio Cesar Mendes Bordallo, Quentin Smets, Ludovic Desplanque, Xavier Wallart, Olivier Richard, Bastien Douhard, Anne Verhulst, Nadine Collaert, Clement Merckling, Marc Heyns, Aaron Thean

In this work, we study the influence of molecular beam epitaxy (MBE) growth parameters on the behavior of a staggered band gap n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki diodes. We first first show that a careful doping is required to avoid any crystal defects. Then the influence of the doping...

ECS Transactions, 2016, 72 (3), pp.73-80. ⟨10.1149/07203.0073ecst⟩. ⟨hal-05479977⟩