Publicaciones

• COMM

Structure de bande de chaînes atomiques harmoniques et anharmoniques couplées

Bertrand Dubus, Jerome O. Vasseur, N. Swinteck, K. Muralidharan, P. Deymier

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUS1 : Acoustique Ultrasonore, papier CFA2014/95, 1240-1245. ⟨hal-00978392⟩

• COMM

Electrolyte-gated organic/nanoparticles synapstor (synapse-transistor) for biocompatible synapse prosthesis

Simon Desbief, Adrica Kyndiah, Mauro Murgia, Tobais Cramer, Fabio Biscarini, David Guérin, Stéphane Lenfant, F. Alibart, Dominique Vuillaume

We have recently demonstrated how we can use charge trapping/detrapping in an array of gold nanoparticules (NPs) at the SiO2/pentacene interface to design a SYNAPSTOR (synapse transistor) mimicking the dynamic plasticity of a biological synapse. This device (memristor-like) mimics short-term...

Materials Research Society Spring Meeting, MRS Spring 2014, Symposium Z - Bioelectronics - Materials, Processes and Applications, Symposium AA - Advanced Multifunctional Biomaterials for Neuroprosthetic Interfaces, 2014, San Francisco, CA, United States. ⟨hal-00957804⟩

• COMM

Electrolyte-gated organic synapse-transistor for biocompatible applications

Dominique Vuillaume, Simon Desbief, Adrica Kyndiah, Mauro Murgia, Tobias Cramer, Fabio Biscarini, David Guérin, Stéphane Lenfant

10th International Conference on Organic Electronics, ICOE 2014, 2014, Modena, Italy. ⟨hal-00999995⟩

• COMM

On the mechanical and electronic properties of alkylthiolated Au nanocrystals

Nicolas Clément, K. Smaali, S. Desbief, G. Foti, T. Frederiksen, D. Sanchez-Portal, A. Arnau, Jean-Philippe Nys, P. Leclere, Dominique Vuillaume

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055035⟩

• COMM

Memristive devices: an interconnect solution for matrix-based architectures?

Sébastien Le Beux, F. Alibart, Dominique Vuillaume, Catherine Dubourdieu, Ian O'Connor

no abstract

Symposium S: Memristor materials, mechanisms and devices for unconventional computing, E-MRS 2014 Spring Meeting, 2014, Lille, France. ⟨hal-01489813⟩

• COMM

Flat THz launcher antenna

Unai Beaskoetxea, Miguel Beruete, Mokhtar Zehar, Amit Agrawal, Shuchang Liu, Karine Blary, Abdallah Chahadih, Xiang-Lei Han, David Etayo, Miguel Navarro-Cia, Ajay Nahata, Tahsin Akalin, Mario Sorolla

1D and 2D leaky-wave corrugated antennas working at terahertz frequencies are numerically and experimentally studied. These structures allow temporal-pulse and beam shaping by engineering the leakage rate of the surface waves induced by the corrugations

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975796⟩

• COMM

Narrow linewidth generation at 1 THz using cascaded Brillouin fiber lasers and quasi-optic UTC-PD

Guillaume Ducournau, Denis Bacquet, P. Szriftgiser, Fabio Pavanello, Emilien Peytavit, Mohammed Zaknoune, Alexandre Beck, Jean-Francois Lampin

Narrow linewidth THz generation using a cascaded Brillouin fibre laser structure and a unitraveling carrier photodiode is proposed. Using two distributed feedback lasers separated by > 1 THz with 1 MHz initial linewidth, the linewidth of the realized THz source is found to be < 100 Hz at 1014...

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956153⟩. ⟨hal-03286169⟩

• ART

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull...

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• OUV

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 2nd ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2014, 978-94-017-8010-0. ⟨hal-04515864⟩

• ART

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based...

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩