Publicaciones

• ART

Interferometer-based microwave microscopy operating in transmission mode

Kamel Haddadi, Tuami Lasri

A microwave near-field sensing technique with sub-wavelength resolution is proposed for nondestructive local characterization of materials. The method is based on the measurement of a transmission coefficient by means of an association of a vector network analyzer, a hybrid coupler, an evanescent...

IEEE Sensors Journal, 2014, 14, pp.2226-2227. ⟨10.1109/JSEN.2014.2317452⟩. ⟨hal-01000003⟩

• COMM

2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

Christophe Dalle, François Dessenne, Jean-Luc Thobel

In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued...

17th International Workshop on Computational Electronics, IWCE 2014, 2014, Paris, France. paper P30, 4 p., ⟨10.1109/IWCE.2014.6865861⟩. ⟨hal-01005723⟩

• ART

A modal formulation for the propagation of guided waves in straight and curved pipes and the scattering at their junction

M. El Bakkali, A. Lhémery, V. Baronian, Sébastien Grondel

The well-established semi-analytic finite element (SAFE) method for predicting guided wave propagation in straight guides is extended to deal with curved pipes using curvilinear coordinates system, following developments by Treyssède and Laguerre [J. Sound Vib. 329 1702-16 (2010)] for helical wires...

Journal of Physics: Conference Series, 2014, 12th Anglo-French Physical Acoustics Conference (AFPAC2013) 16–18 January 2013, Fréjus, France, 498, pp.012012. ⟨10.1088/1742-6596/498/1/012012⟩. ⟨hal-00975724⟩

• COMM

Organic synapstor for unconventional computing and biocompatible applications

Dominique Vuillaume

21st Korean Conference on Semiconductors, KCS 2014, International Symposium on Next Generation Terabit Memory Technology, 2014, Seoul, South Korea. ⟨hal-00957813⟩

• COMM

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulsed DC sputtering

Thomas Aviles, Jean-Pierre Vilcot

Industrial Cu(In,Ga)Se2 (CIGS) thin films formation process generally require two steps : 1) Cu-In-Ga precursors deposition 2) crystallization under selenium atmosphere (H2Se). Unfortunately, hydrogen selenide is very hazardous, being the most toxic selenium compound. Nevertheless, recent works...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964159⟩

• COMM

«Nanostructured Lead-Free La₂Ti₂O₇ Piezoelectric Islands Obtained by Ion-Beam Etching»

R. Desfeux, A. Ferri, S. Saitzek, Z. Shao, A. Bayart, J. Costecalde, D. Deresmes, David Troadec, Denis Remiens

no abstract

International Conference Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials – PFM 2014, 2014, Ekaterinburg, Russia. ⟨hal-01702958⟩

• OTHER

Photomélangeurs THz efficaces à base de collage de substrat métallique employant l'indium

Philipp Latzel

2014. ⟨hal-00981856⟩

• COMM

Highly tunable Fabry-Perot resonators using piezoelectric phononic crystals

Bertrand Dubus, Marie -Fraise Ponge, Anne-Christine Hladky, Jerome O. Vasseur, Mai Phamthi

Theoretical and experimental analyses of piezoelectric stacks submitted to periodical electrical boundary conditions via electrodes, are conducted. These structures are shown to exhibit Bragg band gaps which are switched on or off by setting electrodes in short or open circuit. Band gap frequency...

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. paper 5B-6, 154-157, ⟨10.1109/ULTSYM.2014.0039⟩. ⟨hal-03300131⟩

• ART

Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

A. Dehzangi, M.F. Mohd Razip Wee, Nicolas Wichmann, S. Bollaert, M.R. Buyong, B.Y. Majlis

A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping...

Micro and Nano Letters, 2014, 9, pp.180-183. ⟨10.1049/mnl.2014.0007⟩. ⟨hal-00969127⟩

• COMM

Patterning innovative conducting interpenetrating polymer network by dry etching

Alexandre Khaldi, Ali Maziz, Cedric Plesse, Caroline Soyer, Dominique Teyssié, Frederic Vidal, Eric Cattan

Interpenetrating polymer networks, as biomimetic actuators, can become successful actuators in the field of microsystems providing they are compatible with micro-technologies. In this paper, we report a novel material synthesized from poly(3,4-ethylenedioxythiophene) and polyethylene oxide)/nitrile...

IEEE/ASME International Conference on Advanced Intelligent Mechatronics, AIM 2014, 2014, Besançon, France. ⟨10.1109/AIM.2014.6878282⟩. ⟨hal-01058046⟩