Publicaciones

Affichage de 6881 à 6890 sur 16167


  • Communication dans un congrès

UWB System Based on the M-OAM Modulation in IEEE.802.15.3a Channel

Khadija Hamidoun, Raja Elassali, Yassin El Hillali, Khalid Elbaamrani, Atika Rivenq, F. Elbahhar

Known for many years but unexploited in the field of communications, ultra wideband systems (UWB) can be a solution to the saturation of the frequency bands. The advantage of such systems is that they are inexpensive in energy because of the limitations imposed by the standard. Our work is to...

5th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2014, Costa de Caparica, Portugal. pp.507-514, ⟨10.1007/978-3-642-54734-8_56⟩. ⟨hal-01274817⟩

  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • Communication dans un congrès

[Invited] Millimeter-wave noise and power characterization using in situ tuner

Thomas Quemerais, Daniel Gloria, Sandrine Oeuvrard, Christophe Gaquière, Francois Danneville, Gilles Dambrine, Marina Deng

The advanced micro-and nano-technologies now allows the design of high frequencies integrated circuit with transistors operating at millimeter-wave (MMW) frequencies and beyond. This evolution led us to develop industrial test tools to characterize and validate the models of these transistors....

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WMI - Challenges and advances in wafer-level calibration and characterization of millimeter and sub-millimeter wave devices and systems, 2014, Tampa, FL, United States. ⟨hal-01044780⟩

  • Communication dans un congrès

Nonlinear measurement dedicated to non periodic pulse train for radar power amplifier characterization

Vincent Bridier, Damien Ducatteau, M. Olivier, Hans-Joachim Simon, François Graux, Philippe Eudeline, Gilles Dambrine

A six port mixer based 20GHz nonlinear vector network analyzer (NVNA) dedicated to the characterization of radar power amplifier driven by non periodic pulsed signal is proposed. For the first time a mixer based NVNA is able to measure the fundamental and two harmonics simultaneously while using...

62nd IEEE MTT-S International Microwave Symposium, IMS 2014, 2014, Tampa, FL, United States. paper THP-26, 4 p., ⟨10.1109/MWSYM.2014.6848400⟩. ⟨hal-01044723⟩

  • Communication dans un congrès

Nonlinear measurement of non periodic pulse train with mixer based NVNA dedicated to radar power amplifier

Vincent Bridier, Damien Ducatteau, Maxime Olivier, Hans-Joachim Simon, François Graux, Philippe Eudeline, Gilles Dambrine

A measurement of time domain waveforms using a commercial two ports mixer based NVNA to measure a non periodic repetitive radar pulse train as a periodic one was performed. Then for the first time a 20GHz six port mixer based NVNA able to measure three different frequencies at the same time is...

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2014, 2014, Leuven, Belgium. 3 p., ⟨10.1109/INMMIC.2014.6815076⟩. ⟨hal-01005646⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'....

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩

  • Communication dans un congrès

Acoustical twisting

Antoine Riaud, Michael Baudoin, Jean-Louis Thomas, Olivier Bou Matar

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015314⟩