Publicaciones

• Article dans une revue

Acousto-optic couplings in a phoXonic crystal slab L1 cavity

Samuel Dupont, Quentin Rolland, Joseph Gazalet, Jean-Claude Kastelik

Acousto-optic coupling mechanisms within simultaneous photonic and phononic crystal cavities are theoretically studied. The structure considered is a silicon slab drilled periodically with air holes arranged on a square lattice; the cavity is obtained by removing one hole from the ideal crystal...

Journal of Physics: Conference Series, 2014, 490, 012175, 4 p. ⟨10.1088/1742-6596/490/1/012175⟩. ⟨hal-00961478⟩

• Article dans une revue

Ferroelectrics based absorbing layers

Jianping Hao, Véronique Sadaune, Ludovic Burgnies, Didier Lippens

We show that ferroelectrics-based periodic structure made of BaSrTiO3 (BST) cubes, arrayed onto a metal plate with a thin dielectric spacer film exhibit a dramatic enhancement of absorbance with value close to unity. The enhancement is found around the Mie magnetic resonance of the Ferroelectrics...

Journal of Applied Physics, 2014, 116 (4), pp.043520. ⟨10.1063/1.4891728⟩. ⟨hal-01055079⟩

• Article dans une revue

All optical method for investigation of spin and charge transport in semiconductors : combination of spatially and time-resolved luminescence

Fabian Cadiz, Philippe Barate, D. Paget, Denis S Grebenkov, J.P. Korb, A.C.H. Rowe, Thierry Amand, S. Arscott, Emilien Peytavit

A new approach is demonstrated for investigating charge and spin diffusion as well as surface and bulk recombination in unpassivated doped semiconductors. This approach consists in using two complementary, conceptually related, techniques, which are time-resolved photoluminescence (TRPL) and...

Journal of Applied Physics, 2014, 116 (2), pp.023711. ⟨10.1063/1.4889799⟩. ⟨hal-01024991⟩

• Communication dans un congrès

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

T. Schutz-Kuchly, A. Slaoui, J. Zelgowski, A. Bahouka, M. Pawlik, Jean-Pierre Vilcot, E. Delbos, M. Bouttemy, R. Cabal

Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are...

4th Photovoltaic Technical Conference, PVTC 2013, ''Thin Film and Advanced Silicon Solutions 2013'', 2013, Aix-en-Provence, France. 55201, 5 p., ⟨10.1051/epjpv/2013027⟩. ⟨hal-00811798⟩

• Article dans une revue

Interferometric Near-field Microwave Microscopy Platform for Electromagnetic Micro-analysis

Kamel Haddadi, Jaouad Marzouk, Sijia Gu, S. Arscott, Gilles Dambrine, Tuami Lasri

We report an original near-field microwave microscope based on an interferometric technique for dielectric characterization in liquid media. The instrumentation combines a vector network analyzer, an interferometry-based matching network and dedicated evanescent microstrip probes fabricated in...

Procedia Engineering, 2014, EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers, 87, pp.388-391. ⟨10.1016/j.proeng.2014.11.733⟩. ⟨hal-02345634⟩

• Communication dans un congrès

Facile routes to acquire single DNA functionalized gold nanoarrays on silicon chip

Ragavendran Sivakumarasamy, Elodie Richard, Christian Slomianny, Dominique Vuillaume, Yannick Coffinier, Nicolas Clément

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00957802⟩

• Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩

• Article dans une revue

Features of acoustic resonance in iron borate

K.M. Skibinsky, M.B. Strugatsky, S.V. Yagypov, A.I. Yevstafyev, V.L. Preobrazensky, V.N. Bersansky

Acoustic resonance in a weak-ferromagnetic iron borate monocrystal was investigated. It was shown that observed field dependence of positions and magnitudes of the resonance peaks can be explained within framework of the developed theory of magnetic birefringence of sound in the inhomogeneous...

Functional Materials, 2014, 21, pp.59-63. ⟨hal-00981857⟩

• Communication dans un congrès

Polarization properties of specular and dense multipath components in a large industrial hall

Isabelle Vin, Davy Gaillot, Emmeric Tanghe, Wout Joseph, Pierre Laly, M. Lienard, Luc Martens

This paper presents a comprehensive analysis of the polarization characteristics of specular and dense multipath components in a large industrial hall, based on frequency-domain channel sounding experiments at 1.3 GHz. The RiMAX maximum-likelihood estimator is used to extract the full-polarimetric...

9th COST IC1004 Management Committee and Scientific Meeting, 2014, Ferrara, Italy. ⟨hal-00961432⟩

• Article dans une revue

Graphene nanotransistors for RF charge detection

E. Pallecchi, Q. Wilmart, A.C. Betz, S.H. Jhang, G. Fève, J.M. Berroir, Sylvie Lepilliet, Gilles Dambrine, H. Happy, B. Plaçais

We have studied the static and dynamical properties of a graphene microwave nanotransistor to be used as sensitive fast charge detectors. The channel consists of exfoliated graphene on SiO2 with a 120 nm long, 900-1500 nm wide top-gate deposited on 5 nm AlOx dielectric. The scattering parameters...

Journal of Physics D: Applied Physics, 2014, 47, 094004, 5 p. ⟨10.1088/0022-3727/47/9/094004⟩. ⟨hal-00946703⟩