Publicaciones

Affichage de 7021 à 7030 sur 16170


  • Communication dans un congrès

Assesment of the motion using the ActimedARM: impact of the sensor placement

J. Collet, M. Cerny, L. Delporte, Norbert Noury

no abstract

YBERC14, 2014, Bratislava, Slovakia. ⟨hal-01489943⟩

  • Communication dans un congrès

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

T. Schutz-Kuchly, A. Slaoui, J. Zelgowski, A. Bahouka, M. Pawlik, Jean-Pierre Vilcot, E. Delbos, M. Bouttemy, R. Cabal

Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are...

4th Photovoltaic Technical Conference, PVTC 2013, ''Thin Film and Advanced Silicon Solutions 2013'', 2013, Aix-en-Provence, France. 55201, 5 p., ⟨10.1051/epjpv/2013027⟩. ⟨hal-00811798⟩

  • Article dans une revue

Interferometric Near-field Microwave Microscopy Platform for Electromagnetic Micro-analysis

Kamel Haddadi, Jaouad Marzouk, Sijia Gu, S. Arscott, Gilles Dambrine, Tuami Lasri

We report an original near-field microwave microscope based on an interferometric technique for dielectric characterization in liquid media. The instrumentation combines a vector network analyzer, an interferometry-based matching network and dedicated evanescent microstrip probes fabricated in...

Procedia Engineering, 2014, EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers, 87, pp.388-391. ⟨10.1016/j.proeng.2014.11.733⟩. ⟨hal-02345634⟩

  • Communication dans un congrès

Facile routes to acquire single DNA functionalized gold nanoarrays on silicon chip

Ragavendran Sivakumarasamy, Elodie Richard, Christian Slomianny, Dominique Vuillaume, Yannick Coffinier, Nicolas Clément

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00957802⟩

  • Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩