Publicaciones

Affichage de 7241 à 7250 sur 16055


  • ART

Preface for the special issue of MTAP following CBMI 2011

José M. Martínez, Bernard Merialdo, Jenny Benois-Pineau, Joemon Jose

Multimedia Tools and Applications, 2013, 62 (1), pp.1 - 4. ⟨10.1007/s11042-011-0927-6⟩. ⟨hal-01437497⟩

  • ART

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f...

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

  • COMM

High spectral purity microwave and terahertz oscillator

Gwennaël Danion, Goulc'Hen Loas, Ludovic Frein, Cyril Hamel, Anthony Carré, Steve Bouhier, Marc Vallet, Marc Brunel, Antoine Rolland, Mehdi Alouini, François Bondu, Alexandre Beck, Guillaume Ducournau, Mohamed Zaknoune, Christophe Coinon, Xavier Wallart, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Frédéric Cleva, Jean-Pierre Coulon, Mourad Merzougui, Alain Brillet, Gregoire Pillet, Loïc Morvan, Ghaya Baili, Jérôme Bourderionnet

We report on the design of an ultra stable microwave/THz oscillator and on the realization and the characterization of its laser source. The tunable oscillator is expected to show below -150 dB rad2/Hz phase instability at an offset frequency of 10 kHz for a 30 GHz carrier frequency, as well as 18...

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. pp.40-42, ⟨10.1109/EFTF-IFC.2013.6702198⟩. ⟨hal-00944028⟩

  • COMM

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

  • COMM

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/fluid or solid/solid interfaces

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944056⟩

  • COMM

Caractérisations microondes de condensateurs interdigités accordables sur films minces BTS élaborés par sol-gel

Nicolas Waldhoff, Didier Fasquelle, Karine Blary, Jean-Claude Carru

18èmes Journées Nationales Microondes (JNM 2013), May 2013, Paris, France. 4p. / J3-TM-P2. ⟨hal-00878393⟩

  • COMM

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

  • ART

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩