Publicaciones

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is...

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩

• Communication dans un congrès

Wafer-scale integration of piezoelectric actuation capabilities in nanoelectromechanical systems resonators

Denis Dezest, Fabrice Mathieu, Laurent Mazenq, Caroline Soyer, Jean Costecalde, Denis Remiens, Olivier Thomas, Jean-François Deü, Liviu Nicu

In this work, we demonstrate the integration of piezoelectric actuation means on arrays of nanocantilevers at the wafer scale. We use lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale

2013 Nanomechanical Sensing Workshop, May 2013, Stanford, USA, United States. pp.0. ⟨hal-03165172⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the...

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Surface states and conductivity of silicon nano-wires

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with...

Journal of Applied Physics, 2013, 113 (13), pp.134502. ⟨10.1063/1.4798611⟩. ⟨hal-00809853⟩

• Article dans une revue

Inline high frequency ultrasonic particle sizer

Fabrice Lefebvre, J. Petit, Georges Nassar, P. Debreyne, Guillaume Delaplace, Bertrand Nongaillard

This paper reports the development of a new method of particle sizing in a liquid. This method uses high frequency focused ultrasounds to detect particles crossing the focal zone of an ultrasonic sensor and to determine their size distribution by processing the reflected echoes. The major advantage...

Review of Scientific Instruments, 2013, 84 (7), pp.075101. ⟨10.1063/1.4811847⟩. ⟨hal-00877657⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged...

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that...

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Article dans une revue

Detecting response of microelectromechanical resonators by microwave reflectometry

Bernard Legrand, D. Ducatteau, D. Theron, B. Walter, H. Tanbakuchi

Applied Physics Letters, 2013, 103, pp.053124-1-5. ⟨10.1063/1.4817411⟩. ⟨hal-00871931⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the...

43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩