Publicaciones

• COMM

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878944⟩

• ART

Analytical procedure for determining the linear and nonlinear effective properties of the elastic composite cylinder

S. Giordano

International Journal of Solids and Structures, 2013, 50, pp.4055-4069. ⟨10.1016/j.ijsolstr.2013.08.017⟩. ⟨hal-00871911⟩

• ART

Shift and torsion contact problems for arbitrary axisymmetric normal stress distributions

Grey Sh Boltachev, Vladislav Aleshin

In this paper, we analyze the contact interaction of axisymmetric particles subject to a subsequent application of a constant normal load and a tangential or rotational force. A rigorous solution to the frictional contact problem is given by the known Jäger theorem that presents a relationship...

International Journal of Solids and Structures, 2013, 50, pp.2894-2900. ⟨10.1016/j.ijsolstr.2013.05.004⟩. ⟨hal-00871907⟩

• COMM

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

• ART

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever...

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• COMM

Photomixing THz sources : mW level and kHz linewidth

Emilien Peytavit, Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Tahsin Akalin, Jean-Francois Lampin

European Microwave Week 2013, Workshops and Short Courses, W12, EuMC & EuMIC, Terahertz Technologies - From Materials to Devices and Their Applications, 2013, Nuremberg, Germany. ⟨hal-00878926⟩

• COMM

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (...

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩

• ART

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

• ART

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩

• ART

Theoretical and experimental evidence of Fano-like resonances in simple monomode photonic circuits

A. Mouadili, E.H. El Boudouti, A. Soltani, Abdelkrim Talbi, Abdellatif Akjouj, Bahram Djafari-Rouhani

A simple photonic device consisting of two dangling side resonators grafted at two sites on a waveguide is designed in order to obtain sharp resonant states inside the transmission gaps without introducing any defects in the structure. This results from an internal resonance of the structure when...

Journal of Applied Physics, 2013, 113 (16), pp.164101. ⟨10.1063/1.4802695⟩. ⟨hal-00819665⟩