Publicaciones

Affichage de 7941 à 7950 sur 16055


  • COMM

Conductance statistics from a large array of sub-10 nm molecular junctions

K. Smaali, N. Clement, G. Patriarche, D. Vuillaume

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00797676⟩

  • COMM

[Invited] Graphene growth for device applications

H. Happy, D. Vignaud

60th IEEE MTT-S International Microwave Symposium, IMS 2012, Short Course SC-1 : Graphene and RF Applications, 2012, Montréal, QC, Canada. ⟨hal-00797277⟩

  • COMM

Investigation of GaAs/GaAsxSb1-x nanowires by micro-Raman spectroscopy

L. Zweifel, P. Caroff, S. Conesa Boj, M. Heiss, A. Fontcubeta I Morral

31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797652⟩

  • COMM

A surface-wave microfluidic system for biomolecule spectroscopic analysis

Simon Laurette, A. Treizebre, Adil Elagli, Bertrand Bocquet

2nd Workshop on Frontiers in Biological Detection, PLASMOBIO 2012, 2012, Mons, Belgium. ⟨hal-00798840⟩

  • COMM

Milliwatt-level output power up to 305 GHz generated by photomixing in a GaAs photoconductor

Emilien Peytavit, Sylvie Lepilliet, Francis Hindle, Christophe Coinon, Tahsin Akalin, Guillaume Ducournau, Gaël Mouret, Jean-Francois Lampin

5th Workshop on Terahertz Technology, 2012, Kaiserslautern, Germany. ⟨hal-00798887⟩

  • COMM

Influence of antimony on III-V nanowires grown by MBE

P. Caroff, S. Conesa-Boj, Y. Makoudi, B. Grandidier, A. Fontcuberta I Morral, X. Wallart

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797348⟩

  • COMM

High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797346⟩