Publicaciones

• ART

Characterization and modeling of DHBT in InP/GaAsSb technology for the design and fabrication of a Ka Band MMIC oscillator

Sylvain Laurent, Jean-Christophe Nallatamby, Michel Prigent, Muriel Riet, Virginie Nodjiadjim

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III-V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700mn). The transistor used in the circuit has a 15 μm long two-...

Active and Passive Electronic Components, 2012, 2012 (Article ID 796973), 15 p. ⟨10.1155/2012/796973⟩. ⟨hal-00704049⟩

• ART

A 1 k-pixel video camera for 0.7-1.1 terahertz imaging applications in 65-nm CMOS

R. Al Hadi, H. Sherry, J. Grzyb, Y. Zhao, W. Forster, H.M. Keller, A. Cathelin, A. Kaiser, U.R. Pfeiffer

IEEE Journal of Solid-State Circuits, 2012, 47, pp.2999-3012. ⟨10.1109/JSSC.2012.2217851⟩. ⟨hal-00787388⟩

• ART

PEDOT Based Conducting IPN Actuators: Effects of Electrolyte on Actuation

Cedric Plesse, Alexandre Khaldi, Caroline Soyer, Eric Cattan, Dominique Teyssié, Claude Chevrot, Frédéric Vidal

Actuators from conducting IPNs architecture are described. The electroactive materials are based on several PEO/elastomer IPNs as solid polymer electrolytes in which the conducting polymer Poly(3,4-ethylenedioxythiophene) (PEDOT) is gradually dispersed, i.e. its content decreases from the outside...

Advances in Science and Technology, 2012, 79, pp.53-62. ⟨10.4028/www.scientific.net/AST.79.53⟩. ⟨hal-03286846⟩

• COMM

A millimeter-wave elastomeric microstrip phase shifter

S. Hage-Ali, Yovan Orlic, Nicolas Tiercelin, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod, Philippe Coquet

This communication reports an innovative lowcost millimeter-wave microstrip phase shifter using the mechanical reconfiguration of a metallized polydimethylsiloxane (PDMS) elastomeric ground plane. The reconfigurable ground plane is used to tune an air gap under a fused quartz substrate, inducing a...

IEEE MTT-S International Microwave Symposium, IMS 2012, Jun 2012, Montréal, Canada. ⟨10.1109/MWSYM.2012.6259722⟩. ⟨hal-00772985⟩

• COMM

Etude théorique et expérimentale de la propagation d'ondes UHF en environnement semi-confiné : application au cas des véhicules

M. Handeme, Philippe Mariage, Laurent Clavier

15èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, JNRDM 2012, 2012, Marseille, France. pp.1-4. ⟨hal-00806596⟩

• ART

Searching for THz Gunn oscillations in GaN planar nanodiodes

Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Javier Mateos, Tomás González, Paul Sangare, Marc Faucher, Bertrand Grimbert, Virginie Brandli, Guillaume Ducournau, Christophe Gaquière

A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some...

Journal of Applied Physics, 2012, 111 (11), pp.113705. ⟨10.1063/1.4724350⟩. ⟨hal-00788170⟩

• COMM

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/liquid interface

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. ⟨hal-00798848⟩

• OTHER

Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité

Yannick Douvry

2012. ⟨hal-00799322⟩

• ART

Non-radiative complete surface acoustic wave bandgap for finite-depth holey phononic crystal in lithium niobate

Didit Yudistira, Yan Pennec, Bahram Djafari-Rouhani, Samuel Dupont, Vincent Laude

We demonstrate the existence of non-radiative complete surface acoustic wave(SAW)bandgaps for two-dimensional piezoelectric phononic crystals of holes. Holes of finite depth in a semi-infinite LiNbO3 substrate are specifically considered. SAWbandgaps are determined from the band structure...

Applied Physics Letters, 2012, 100, pp.061912. ⟨10.1063/1.3684839⟩. ⟨hal-00759306⟩

• COMM

Study of rough surface to decrease reverberation noise in ultrasonic imaging

Jin-Ying Zhang, G. Han, S.M. Chen, Y. Qian, Wei-Jiang Xu, Julien Carlier, Bertrand Nongaillard

Rough back surface is investigated to decrease the reverberation noise in ultrasonic imaging. Silicon crystal is selected as the backing substrate of the ultrasonic transducer because rough structure is convenient to be fabricated on silicon substrate using microfabrication technologies. Different...

10th IEEE International New Circuits and Systems Conference, NEWCAS 2012, 2012, Montréal, QC, Canada. pp.509-512, ⟨10.1109/NEWCAS.2012.6329068⟩. ⟨hal-00803090⟩