Publicaciones

• Article dans une revue

Hall-effect measurements of sol-gel derived CuInS2 thin films for photovoltaic applications

Bourlier Yoan, Rémy Bernard, C. Lethien, Pascal Roussel, Malek Zegaoui, Mohamed Bouazaoui, N. Rolland, Paul-Alain Rolland

CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-...

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (12), pp.125801-1-3. ⟨10.1143/APEX.5.125801⟩. ⟨hal-00786913⟩

• Article dans une revue

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

Christophe Krzeminski, Xiang-Lei Han, Guilhem Larrieu

A new understanding of the retarded or self-limited oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and...

Applied Physics Letters, 2012, 100 (26), pp.263111. ⟨10.1063/1.4729410⟩. ⟨hal-00643617v2⟩

• Proceedings/Recueil des communications

Il Trattato di Fortificazione di Galileo Galilei (Galileio Galilei's Trattato di Fortificazione)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 4th History of Engineering Conference, I, Cuzzolin, pp.77-90, 2012, 978-88-87479-48-5. ⟨hal-04514409⟩

• Communication dans un congrès

STM and STS characterization of PTCDI self assembly on Si(111) Ag surface

R. Stiufiuc, C. Iacovita, B. Grandidier, V. Chis, G. Stiufiuc

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00798184⟩

• Article dans une revue

Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)

M. Bengagi, François Morini, M. El Maaoui, Pascal Marchet

The present work is devoted to the study of the Zr 4þ /Ti 4 substitution in the K1/2Bi1/2Ti(1-x)ZrxO3 solid solution (x ¼ 0.0 to x ¼ 1.0), based upon the K1/2Bi1/2TiO3 (KBT) ferroelectric compound. The tetragonal distortion of KBT is suppressed by this substitution and leads to the cubic compound...

Physica Status Solidi A (applications and materials science), 2012, 209, pp.2063-2072. ⟨10.1002/pssa.201127327⟩. ⟨hal-00720501⟩

• Article dans une revue

Analytical modeling of acoustic emission from buried or surface-breaking crack under stress

W. Ben Khalifa, K. Jezzine, G. Hello, Sébastien Grondel

Journal of Physics: Conference Series, 2012, 353, pp.012016-1-12. ⟨10.1088/1742-6596/353/1/012016⟩. ⟨hal-00790432⟩

• Communication dans un congrès

Fabrication de circuits par impression jet d'encre sur substrats souples

H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797282⟩

• Communication dans un congrès

Supercurrent and multiple Andreev reflections in InSb nanowire quantum dot devices with Al contacts

M.T. Deng, Hans Nilsson, P. Caroff, H.Q. Xu

31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00797373⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this...

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Communication dans un congrès

Coupling effect of dielectric metamaterial dimer

F. Zhang, Véronique Sadaune, L. Kang, Q. Zhao, J. Zhou, D. Lippens

6th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2012, 2012, St Petersburg, Russia. paper 195, 580-582. ⟨hal-00804693⟩