Publicaciones

• COMM

A LiNbO3 ultrasonic phased array transducer of more than 100 MHz

Wei-Jiang Xu, X.M. Ji, Jin-Ying Zhang, Julien Carlier, Bertrand Nongaillard, S. Queste, Y.P. Huang, Bogdan Piwakowski

High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the structure design and fabrication of the kerfed ultrasonic array is quite challenging when very high frequency (≥ 100 MHz) is required....

International Congress on Ultrasonics, ICU 2011, 2011, Gdansk, Poland. pp.675-678, ⟨10.1063/1.3703273⟩. ⟨hal-00800446⟩

• COMM

Characterization of structure of porous materials by ultrasonic reflectometry

M. Kaczmarek, Bogdan Piwakowski, R. Drelich

International Congress on Ultrasonics, ICU 2011, 2011, Gdansk, Poland. pp.416-419, ⟨10.1063/1.3703217⟩. ⟨hal-00800447⟩

• ART

Surface passivation effects on AlGaN/GaN high electron mobility transistors with SiO2

M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2175-2177. ⟨10.1166/sl.2011.1787⟩. ⟨hal-00795918⟩

• ART

Compliance at the GaSb/GaP interface by misfit dislocations array

S. El Kazzi, L. Desplanque, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart

Advanced Materials Research, 2011, 324, pp.85-88. ⟨10.4028/www.scientific.net/AMR.324.85⟩. ⟨hal-00795909⟩

• COMM

[Invited] AlSb/InAs HEMTs : an option for performance/power trade-off ?

Yannick Roelens

European Microwave Week, EuMIC, Workshop W07 - High-performance narrow-bandgap HEMT technology for advanced microwave front-ends : towards the end of the roadmap ?, 2011, Manchester, United Kingdom. ⟨hal-00807120⟩

• PROCEEDINGS

Physics–Mathematics Relationship. Historical and Epistemological notes

Raffaele Pisano

Proceedings of the ESU 6 European Summer University History And Epistemology In Mathematics, Verlag Holzhausen GmbH–Holzhausen Publishing Ltd, pp.457-452, 2011, 978-3-85493-206-2. ⟨hal-04513891⟩

• ART

Functionalization of silicon nanowires for specific sensing

V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, J.P. Raskin

Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of...

ECS Transactions, 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩

• COMM

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling

F. Sonnerat, R. Debroucke, Y. Morandini, D. Gloria, Jean-Daniel Arnould

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling". IEEE International Conference on Microelectronic Test Structures (ICMTS), Apr 2011, Amsterdam, Netherlands. ⟨hal-01068863⟩

• ART

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1...

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• COMM

SiN/AlN/GaN : a promising heterostructure for millimeter wave applications

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, May 2011, Catania, Italy. pp.39-40. ⟨hal-00603112⟩