Publicaciones

• COUV

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

• ART

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved...

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩

• ART

Nanostructured polyaniline-based composites for ppb range ammonia sensing

J.L. Wojkiewicz, V.N. Bliznyuk, S. Carquigny, N. Elkamchi, N. Redon, T. Lasri, A.A. Pud, S. Reynaud

Sensors and Actuators B: Chemical, 2011, 160, pp.1394-1403. ⟨10.1016/j.snb.2011.09.084⟩. ⟨hal-00783484⟩

• ART

Optimization of ohmic contact and adhesion on polysilicon in MEMS–NEMS wet etching process

Etienne Herth, Emmanuelle Algré, Bernard Legrand, Lionel Buchaillot

This paper presents the optimization of polysilicon doping and metallization to form ohmic contact with etching resistance. Indeed, polysilicon doped by ion implantation and ohmic contacts are an important and interesting part of integrated circuit technology or MEMS and NEMS. LPCVD-polysilicon...

Microelectronic Engineering, 2011, 88 (5), pp.724-728. ⟨10.1016/j.mee.2010.06.032⟩. ⟨hal-02300269⟩

• COMM

Characterization and modeling for the piezoelectric actuator of AlGaN/GaN-resonators

Achraf Ben Amar, Marc Faucher, Bertrand Grimbert, Virginie Brandli, Lionel Buchaillot, Christophe Gaquière, Didier Theron

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800035⟩

• ART

Exploit the bandwidth capacities of the perfluorinated graded index polymer optical fiber for multi-services distribution

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

The study reported here deals with the exploitation of perfluorinated graded index polymer optical fiber bandwidth to add further services in a home/office network. The fiber properties are exhibited in order to check if perfluorinated graded index plastic optical fiber (PFGI-POF) is suitable to...

Polymers, 2011, 3 (3), pp.1006-1028. ⟨10.3390/polym3031006⟩. ⟨hal-00639804⟩

• COMM

Courbement des ondes électromagnétiques par gradient d'indice des métamatériaux à 1.55 µm

M. Hofman, X. Melique, O. Vanbesien, D. Lippens

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807137⟩

• COMM

Réfraction négative des ondes longitudinales dans un cristal phononique élastique

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus, B. Morvan

Colloque National Métamatériaux, CNM 2011, 2011, Orsay, France. ⟨hal-00807121⟩

• COMM

Quantum cascade transistor

H. Nguyen Van, M. Zaknoune, J.C. Moreno, A. N. Baranov, R. Teissier

11th International Conference on Intersubband Transitions in Quantum Wells, ITQW 2011, 2011, Badesi, Sardinia, Italy. ⟨hal-00807126⟩

• ART

4.2 GHz sub-harmonic low-phase-noise oscillator based on BAW resonator

M. Li, S. Seok, N. Rolland, P.A. Rolland, H. El Aabbaoui, E. de Foucauld, P. Vincent

Electronics Letters, 2011, 47, pp.239-240. ⟨10.1049/el.2010.3472⟩. ⟨hal-00579071⟩