Publicaciones

• COMM

Détermination large bande de la permittivité diélectrique de matériaux pulvérulents

Q. Lu, Luc Dubois, Erick Paleczny, Jean-François Legier, Pierre-Yves Cresson, T. Lasri

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 132, 1E6, 1-4. ⟨hal-00603131⟩

• ART

Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale

D. Brunel, David Troadec, D. Hourlier, D. Deresmes, M. Zdrojek, Thierry Melin

We investigate the fabrication of electrical contacts using ion (IBID) - and electron-beam induced deposition (EBID) of platinum at the sub-µm scale. Halos associated with the metal surface decoration in the 0.05-2 µm range are characterized electrically using transport measurements, conducting...

Microelectronic Engineering, 2011, 88 (7), pp.1569-1572. ⟨10.1016/j.mee.2011.03.011⟩. ⟨hal-00603003⟩

• ART

Polyethylene oxide-polytetrahydrofurane-PEDOT conducting interpenetrating polymer networks for high speed actuators

Cedric Plesse, Alexandre Khaldi, Qiang Wang, Eric Cattan, D. Teyssie, C. Chevrot, F. Vidal

Smart Materials and Structures, 2011, 20, pp.124002-1-8. ⟨10.1088/0964-1726/20/12/124002⟩. ⟨hal-00795912⟩

• ART

One-dimensional magnonic circuits with size-tunable band gaps and selective transmission

Bahram Djafari-Rouhani, Housni Al-Wahsh, Abdellatif Akjouj, L. Dobrzynski

We present a review of our theoretical calculations about magnon transport in quasi-one-dimensional (1D) magnonic circuits constituted by waveguides coupled to side resonators. Phenomena such as the existence of band gaps, rejective and selective transmissions and Fano resonances will be discussed...

Journal of Physics: Conference Series, 2011, 303, pp.012017-1-10. ⟨10.1088/1742-6596/303/1/012017⟩. ⟨hal-00795898⟩

• ART

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• COMM

Thin film transmission lines using cyclic olefin copolymer

Emilien Peytavit, C. Donche, Sylvie Lepilliet, Guillaume Ducournau, Jean-Francois Lampin

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, 2011, Houston, TX, United States. paper W2E.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105161⟩. ⟨hal-00800490⟩

• COMM

Improvement in graphene nanoribbons process for field effet transistors

D. Mele, R. Fleurier, E. Pichonat, H. Happy

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799794⟩

• COMM

Electrical compact modelling of graphene transistors

S. Fregonese, H.N. Nguyen, C. Majek, C. Maneux, H. Happy, N. Meng, T. Zimmer

ImagineNano, Graphene 2011, 2011, Bilbao, Spain. pp.121-122. ⟨hal-00799969⟩

• COMM

Wide bandgap self switch nanodevices for THz applications at room temperature

Christophe Gaquière, Guillaume Ducournau, P. Sangare, B. Grimbert, M. Faucher, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos

41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.1150-1152. ⟨hal-00800102⟩

• ART

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and...

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩