Publicaciones

• Communication dans un congrès

Fast and simple fabrication of PDMS/alginate based microfluidic round channels

Magalie de Ville, Philippe Coquet, Philippe Brunet, Rabah Boukherroub, Yannick Coffinier

2nd European Conference on Microfluidics, µFlu'10, Dec 2010, Toulouse, France. paper 10-209, 1-6. ⟨hal-00568964⟩

• Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

• Article dans une revue

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

• Article dans une revue

Wavelength and beam launching effects on silica optical fiber in local area networks

H. Mrabet, Iyad Dayoub, R. Attia, W. Hamouda

Optics Communications, 2010, 283, pp.4234-4241. ⟨10.1016/j.optcom.2010.06.034⟩. ⟨hal-00549472⟩

• Article dans une revue

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Xing Tang, Michel Rousseau, N. Defrance, Virginie Hoel, A. Soltani, R. Langer, Jean-Claude de Jaeger

For gallium nitride (GaN) based microwave power devices, the thermal behavior due to the self-heating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical-thermalmodel has been developed to analyze the physical and thermal phenomena...

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1820-1826. ⟨10.1002/pssa.200925321⟩. ⟨hal-00549464⟩

• Article dans une revue

Shielded cables transfer impedance measurements

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2010, _, pp.38-45. ⟨hal-00567898⟩

• Article dans une revue

Materials selection procedure for RF-MEMS

G. Guisbiers, E. Herth, Bernard Legrand, N. Rolland, T. Lasri, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.1792-1795. ⟨10.1016/j.mee.2009.10.016⟩. ⟨hal-00549627⟩

• Article dans une revue

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, Christophe Gaquière

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes...

Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩

• Communication dans un congrès

Une Méthode Galerkin Discontinue Nodale pour la Propagation Non Linéaire dOndes Elastiques

Olivier Bou Matar, Yifeng Li, Vladimir Preobrazhensky, Philippe Pernod

Le développement récent de méthodes de Contrôle Non Destructif (CND) par acoustique non linéaire ou létude dondes sismiques de fortes amplitudes nécessitent la mise en place doutils numériques performants permettant de décrire la propagation non linéaire dondes élastiques dans des milieux...

• Communication dans un congrès

Thermal characterization of MBE-grown GaN/AlGaN/GaN on single crystalline diamond

J. Kuzmik, S. Bychikhin, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas, R. Balmer, D. Pogany

6th International Workshop on Nitride Semiconductors, IWN2010, 2010, Tampa, FL, United States. ⟨hal-00573557⟩