Publicaciones

• COMM

Monte Carlo and rate equation studies of space-charge effect in GaAs/Al0.45Ga0.55As quantum-cascade laser

J. Konupek, P. Borowik, Jean-Luc Thobel, L. Adamowicz

International Conference on Semiconductor Mid-IR Materials and Optics, SMMO 2010, 2010, Warsaw, Poland. ⟨hal-00574443⟩

• COMM

Caractérisation sur plaque de varicap MOS subfemtofarad en technologie silicium

R. Debroucke, J.F. Larchanche, D. Ducatteau, H. Tanbakuchi, Christophe Gaquière

11èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2010, 2010, Brest, France. ⟨hal-00574429⟩

• COMM

Molecular relaxation dynamics in organic monolayer junctions

N. Clement, S. Pleutin, D. Vuillaume

International Conference on Molecular Electronics, 2010, Emmetten, Switzerland. ⟨hal-00574097⟩

• COMM

Growth of aligned self-catalysed GaAs nanowires on Si(111) using a VLS mechanism

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

5th Nanowire Growth Workshop, NWG 2010, 2010, Rome, Italy. ⟨hal-00574033⟩

• COMM

Micropatterned SU-8 surfaces for automatic droplet focusing and single-cell immobilization

D. Debuisson, S. Arscott, V. Senez

20th Anniversary World Congress on Biosensors, Biosensors 2010, 2010, Glasgow, Scotland, United Kingdom. ⟨hal-00574485⟩

• COMM

Résultats récents sur les commutateurs et mémoires moléculaires

K. Smaali, S. Lenfant, David Guérin, S. Karpe, M. Ocafrain, P. Blanchard, A. Rochefort, J. Roncali, D. Vuillaume

Session thématique champ proche du GDR 2426, Physique quantique mésoscopique, 2010, Paris, France. ⟨hal-00574079⟩

• COMM

Nanostructured inorganic-organic hybrid materials based on semiconducting organic nanofibres and quantum dots and their application to plastic solar cells

F. Chandezon, T. Jiu, L.A. Sanchez Rodas, S. Berson, R. de Bettignies, S. Bailly, D. Tondelier, J. Faure-Vincent, P. Reiss, D. Vuillaume, S. Guillerez

6th International ECNP Conference on Nanostructured Polymers and Nanocomposites, 2010, Madrid, Spain. ⟨hal-00574048⟩

• ART

Quantitative testing of robustness on superomniphobic surfaces by drop impact

Thi Phuong Nhung Nguyen, Philippe Brunet, Yannick Coffinier, Rabah Boukherroub

The quality of a liquid-repellent surface is quantified by both the apparent contact angle θ0 that a sessile drop adopts on it, and the value of the liquid pressure threshold the surface can withstand without being impaled by the liquid, hence keeping a low-friction condition. We designed surfaces...

Langmuir, 2010, 26 (23), pp.18369-18373. ⟨10.1021/la103097y⟩. ⟨hal-00551284⟩

• ART

Correlation-induced conductance suppression at level degeneracy in a quantum dot

H.A. Nilsson, O. Karlström, M. Larsson, P. Caroff, J.N. Pedersen, L. Samuelson, A. Wacker, L.E. Wernersson, H.Q. Xu

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing...

Physical Review Letters, 2010, 104 (18), pp.186804. ⟨10.1103/PhysRevLett.104.186804⟩. ⟨hal-00548700⟩

• ART

Shielded cables transfer impedance measurements

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2010, _, pp.38-45. ⟨hal-00567898⟩